Characterization of an azimuthally symmetric helicon wave high density plasma source

1997 ◽  
Vol 15 (6) ◽  
pp. 2885-2892 ◽  
Author(s):  
G. R. Tynan ◽  
A. D. Bailey ◽  
G. A. Campbell ◽  
R. Charatan ◽  
A. de Chambrier ◽  
...  
Keyword(s):  
Plasma Source ◽  
High Density ◽  
Helicon Wave ◽  
Density Plasma

Characterization of a high-density plasma immersion ion implanter with scaleable ECR large-area plasma source

2005 ◽  
Vol 196 (1-3) ◽  
pp. 172-179 ◽  
Author(s):  
Yuri Glukhoy ◽  
Mahmud Rahman ◽  
Gotze Popov ◽  
Alexander Usenko ◽  
Hans J. Walitzki
Keyword(s):  
Plasma Source ◽  
High Density ◽  
Large Area ◽  
Density Plasma

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material

2006 ◽  
Author(s):  
B. A. Park ◽  
C. A. Musca ◽  
J. Antoszewski ◽  
T. Nguyen ◽  
K. J. Winchester ◽  
...  
Keyword(s):  
Carrier Transport ◽  
High Density ◽  
Density Plasma

A Guillemin type E pulse forming network as the driver for a pulsed, high density plasma source

2014 ◽  
Vol 85 (6) ◽  
pp. 063503 ◽  
Author(s):  
Priyavandna J. Rathod ◽  
V. P. Anitha ◽  
Z. H. Sholapurwala ◽  
Y. C. Saxena
Keyword(s):  
Plasma Source ◽  
High Density ◽  
Pulse Forming Network ◽  
Density Plasma

Characterization of the surface layer of GaAs nitrided by high-density plasma

2001 ◽  
Vol 175-176 ◽  
pp. 585-590 ◽  
Author(s):  
Kanji Yasui ◽  
Yuko Tsukada ◽  
Tatsuro Arayama ◽  
Satoshi Okutani ◽  
Tadashi Akahane
Keyword(s):  
Surface Layer ◽  
High Density ◽  
Density Plasma

Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

1996 ◽  
Vol 450 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Plasma Etching ◽  
High Density ◽  
Scanning Electron Micrographs ◽  
Plasma Etch ◽  
Ion Energy ◽  
Residual Damage ◽  
Hall Effect Measurements ◽  
Density Plasma

ABSTRACTHigh density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

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