Low temperature fabrication of amorphous silicon thin film transistors by dc reactive magnetron sputtering

1997 ◽  
Vol 15 (5) ◽  
pp. 2770-2776 ◽  
Author(s):  
C. S. McCormick ◽  
C. E. Weber ◽  
J. R. Abelson ◽  
G. A. Davis ◽  
R. E. Weiss ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Film ◽  
Dc Reactive Magnetron Sputtering

An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

1996 ◽  
Vol 424 ◽  
Author(s):  
C. S. McCormick ◽  
C. E. Webe ◽  
J. R. Abelson
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Film ◽  
Dc Reactive Magnetron Sputtering ◽  
Silicon Based

AbstractWe deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5 × 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

Growth of Anatase TiO2 Thin Film for Photokilling of Bacteria by DC Reactive Magnetron Sputtering Technique

2013 ◽  
Vol 770 ◽  
pp. 173-176 ◽  
Author(s):  
Suree Tongwanichniyom ◽  
Wichian Siriprom ◽  
Dhonluck Manop ◽  
Adisorn Buranawong ◽  
Jakrapong Kaewkhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Uv Light ◽  
Grazing Incidence ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Force Microscopy ◽  
Dc Reactive Magnetron Sputtering

Titanium dioxide (TiO2) thin films have been deposited on Si-wafer and glass slide by DC reactive magnetron sputtering technique at different O2 gas flow rates. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD), surface morphology was analyzed by atomic force microscopy (AFM) and disinfection of surfaces by photo catalytic oxidation with TiO2 and UV light irradiation. The results showed that, from GIXRD results, all as-deposited TiO2 films have crystal structure of TiO2 corresponding to the A(101) and A(200). AFM results showed that the film thicknesses increase from 183 nm to 238 nm with increasing of O2 gas flow rate, while the film roughness was in range of 4.8 nm to 5.9 nm. The as-deposited anatase TiO2 thin film in this work can kill the bacteria when expose to the UV light.

Sign in / Sign up

Export Citation Format

Share Document