Chemical reactions induced by the room temperature interaction of hyperthermal atomic hydrogen with the native oxide layer on GaAs(001) surfaces studied by ion scattering spectroscopy and x-ray photoelectron spectroscopy

1997 ◽  
Vol 15 (5) ◽  
pp. 2502-2507 ◽  
Author(s):  
John T. Wolan ◽  
Charles K. Mount ◽  
Gar B. Hoflund
Keyword(s):  
Chemical Reactions ◽  
Photoelectron Spectroscopy ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Ion Scattering ◽  
X Ray ◽  
Ion Scattering Spectroscopy ◽  
Temperature Interaction

The growth and thermal properties of Au deposited on Rh(111): formation of an ordered surface alloy

2016 ◽  
Vol 18 (36) ◽  
pp. 25230-25240 ◽  
Author(s):  
László Óvári ◽  
András Berkó ◽  
Gábor Vári ◽  
Richárd Gubó ◽  
Arnold Péter Farkas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ion Scattering ◽  
X Ray ◽  
Low Energy Ion Scattering ◽  
Resolution Electron ◽  
Ion Scattering Spectroscopy ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Electron Energy Loss

Scanning tunnelling microscopy (STM), low energy ion scattering spectroscopy (LEIS), X-ray photoelectron spectroscopy (XPS) and high resolution electron energy loss spectroscopy (HREELS) were applied for studying Au deposited on the Rh(111) surface.

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending

2014 ◽  
Vol 778-780 ◽  
pp. 566-570 ◽  
Author(s):  
Wei Huang ◽  
Xi Liu ◽  
Xue Chao Liu ◽  
Tian Yu Zhou ◽  
Shi Yi Zhuo ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Interface Energy ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Band Bending ◽  
X Ray ◽  
Vacuum Chambers ◽  
Transmission Electron ◽  
Electron Transport Properties

Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

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