Pd, Cu, and Au particles on Al2O3 thin films: An infrared reflection absorption spectroscopy study of monometallic and bimetallic planar model supported catalysts

1997 ◽  
Vol 15 (3) ◽  
pp. 1653-1662 ◽  
Author(s):  
D. R. Rainer ◽  
C. Xu ◽  
P. M. Holmblad ◽  
D. W. Goodman
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Supported Catalysts ◽  
Spectroscopy Study ◽  
Planar Model ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection

Specific crystal structure of poly(3-hydroxybutyrate) thin films studied by infrared reflection–absorption spectroscopy

2009 ◽  
Vol 51 (1) ◽  
pp. 132-135 ◽  
Author(s):  
Harumi Sato ◽  
Rumi Murakami ◽  
Katsuhito Mori ◽  
Yuriko Ando ◽  
Isao Takahashi ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Absorption Spectroscopy ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection

New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (Ir-Ras)

1993 ◽  
Vol 318 ◽  
Author(s):  
K. Ishikawa ◽  
H. Ogawa ◽  
C. Inomata ◽  
S. Fujimura ◽  
H. Mori
Keyword(s):  
Thin Films ◽  
Dielectric Function ◽  
Absorption Spectroscopy ◽  
Analytical Method ◽  
Oxide Films ◽  
Interface Structure ◽  
Infrared Reflection Absorption Spectroscopy ◽  
Infrared Reflection ◽  
Phonon Peak ◽  
Viable Method

ABSTRACTSimulation of a thin oxide RAS spectrum obtained by using the dielectric function extracted from thick oxide RAS spectra is shown to be a viable method for the comparison of oxide films of differing thickness. Bulk and near-interfacial features of thermally grown SiO2 thin films were studied by this method and it was found that the LO phonon peak at about 1255 cm−1 reflects bulk SiO2 structure and a higher reflectance between 1100 and 1200 cm−1 reflects SiO2/Si interface structure.

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