Effect of oxygen on methyl radical concentrations in a CH4/H2 chemical vapor deposition reactor studied by infrared diode laser spectroscopy

1996 ◽  
Vol 14 (5) ◽  
pp. 2970-2972 ◽  
Author(s):  
Wai Yip Fan ◽  
Jürgen Röpcke ◽  
Paul B. Davies
Keyword(s):  
Chemical Vapor Deposition ◽  
Diode Laser ◽  
Laser Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Methyl Radical ◽  
Chemical Vapor Deposition Reactor ◽  
Diode Laser Spectroscopy ◽  
Effect Of Oxygen

On the optimization of a dc arcjet diamond chemical vapor deposition reactor

1996 ◽  
Vol 11 (3) ◽  
pp. 694-702 ◽  
Author(s):  
S. W. Reeve ◽  
W. A. Weimer ◽  
D. S. Dandy
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Methyl Radical ◽  
Chemical Kinetic Model ◽  
Model Calculations ◽  
Chemical Vapor Deposition Reactor

Based on results from chemical kinetic model calculations, a method to improve diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing the carbon source gas (CH4) into an Ar/H2 plasma in close proximity to the substrate produced diamond films exhibiting simultaneous improvements in quality and mass deposition rates. These improvements result from a reduced residence time of the methane in the plasma which inhibits the hydrocarbon chemistry in the gas from proceeding significantly beyond methyl radical production prior to encountering the substrate. Improvements in growth rate were modest, increasing by only a factor of two. Optical emission actinometry measurements indicate that the flux of atomic hydrogen across the stagnation layer to the substrate is mass diffusion limited. Since diamond growth depends upon the flux of atomic H to the substrate, these results suggest that under the conditions examined here, a low atomic H flux to the substrate poses an upper limit on the attainable diamond growth rate.

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