Erratum: Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes [J. Vac. Sci. Technol. A 14, 2127 (1996)]

1996 ◽  
Vol 14 (6) ◽  
pp. 3291-3291
Author(s):  
Ying Zhang ◽  
Gottlieb S. Oehrlein ◽  
Ferdinand H. Bell
Keyword(s):  
High Density ◽  
Plasma Etch ◽  
Density Plasma

Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

1996 ◽  
Vol 450 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Plasma Etching ◽  
High Density ◽  
Scanning Electron Micrographs ◽  
Plasma Etch ◽  
Ion Energy ◽  
Residual Damage ◽  
Hall Effect Measurements ◽  
Density Plasma

ABSTRACTHigh density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

Use of Novel Hydrofluorocarbon and Iodofluorocarbon Chemistries for a High Aspect Ratio Via Etch in a High Density Plasma Etch Tool

1998 ◽  
Vol 145 (12) ◽  
pp. 4305-4312 ◽  
Author(s):  
Simon Karecki ◽  
Laura Pruette ◽  
Rafael Reif ◽  
Terry Sparks ◽  
Laurie Beu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Density ◽  
Plasma Etch ◽  
Density Plasma

scholarly journals High-Density Plasma-Induced Etch Damage of GaN

1999 ◽  
Vol 573 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Critical Dimension ◽  
Group Iii Nitrides ◽  
High Plasma ◽  
High Density ◽  
Plasma Flux ◽  
Plasma Etch ◽  
Critical Dimensions ◽  
Profile Control ◽  
Density Plasma

ABSTRACTAnisotropic, smooth etching of the group-Ill nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high dc-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III–V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.

Gallium arsenide surface chemistry and surface damage in a chlorine high density plasma etch process

1997 ◽  
Vol 26 (11) ◽  
pp. 1320-1325 ◽  
Author(s):  
C. R. Eddy ◽  
O. J. Glembocki ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Surface Chemistry ◽  
Surface Damage ◽  
High Density ◽  
Plasma Etch ◽  
Density Plasma

High-density plasma etch selectivity for the III–V nitrides

1998 ◽  
Vol 42 (12) ◽  
pp. 2269-2276 ◽  
Author(s):  
R.J Shul ◽  
C.G Willison ◽  
M.M Bridges ◽  
J Han ◽  
J.W Lee ◽  
...  
Keyword(s):  
High Density ◽  
Plasma Etch ◽  
Density Plasma

Ion Energy Effects on Surface Chemistry and Damage in a High Density Plasma Etch Process for Gallium Arsenide

1998 ◽  
Vol 37 (Part 2, No. 5B) ◽  
pp. L577-L579 ◽  
Author(s):  
Darrin Leonhardt ◽  
Charles R. Eddy, Jr. ◽  
Vasgen A. Shamamian ◽  
Ronald T. Holm ◽  
Orest J. Glembocki ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Surface Chemistry ◽  
High Density ◽  
Plasma Etch ◽  
Ion Energy ◽  
Density Plasma

Dry etching of N-face GaN using two high-density plasma etch techniques

2007 ◽  
Vol 4 (1) ◽  
pp. 200-203 ◽  
Author(s):  
F. Rizzi ◽  
K. Bejtka ◽  
F. Semond ◽  
E. Gu ◽  
M. D. Dawson ◽  
...  
Keyword(s):  
Dry Etching ◽  
High Density ◽  
Plasma Etch ◽  
Density Plasma
Sign in / Sign up

Export Citation Format

Share Document