Growth behavior of copper metalorganic chemical vapor deposition using the (hfac)Cu(VTMOS) precursor on titanium nitride substrates
1996 ◽
Vol 14
(6)
◽
pp. 3214-3219
◽
1995 ◽
Vol 146
(1-4)
◽
pp. 482-488
◽
2005 ◽
Vol 250
(1-4)
◽
pp. 14-20
◽
2005 ◽
Vol 276
(3-4)
◽
pp. 458-464
◽
2005 ◽
Vol 281
(2-4)
◽
pp. 446-451
◽
1996 ◽
Vol 35
(Part 1, No. 8)
◽
pp. 4274-4279
◽
1993 ◽
Vol 11
(1)
◽
pp. 66-77
◽
1995 ◽
Vol 34
(Part 2, No. 7B)
◽
pp. L907-L910
◽
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
2015 ◽
Vol 409
◽
pp. 51-55
◽