Feature scale simulation studies of TEOS‐sourced remote microwave plasma‐enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination

1996 ◽  
Vol 14 (3) ◽  
pp. 977-983 ◽  
Author(s):  
Moneth Virmani ◽  
Dimitri A. Levedakis ◽  
Gregory B. Raupp ◽  
Timothy S. Cale
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxygen Atom ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Simulation Studies ◽  
Feature Scale

scholarly journals Isotope Effect in Thermal Conductivity of Polycrystalline CVD-Diamond: Experiment and Theory

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 322
Author(s):  
Alexander V. Inyushkin ◽  
Alexander N. Taldenkov ◽  
Victor G. Ralchenko ◽  
Andrey P. Bolshakov ◽  
Alexander V. Khomich
Keyword(s):  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Isotopic Composition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Plasma Chemical Vapor Deposition

We measured the thermal conductivity κ(T) of polycrystalline diamond with natural (natC) and isotopically enriched (12C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality polycrystalline diamond wafers were produced by microwave plasma chemical vapor deposition in CH4-H2 mixtures. The thermal conductivity of 12C diamond along the wafer, as precisely determined using a steady-state longitudinal heat flow method, exceeds much that of the natC sample at T>60 K. The enriched sample demonstrates the value of κ(298K)=25.1±0.5 W cm−1 K−1 that is higher than the ever reported conductivity of natural and synthetic single crystalline diamonds with natural isotopic composition. A phenomenological theoretical model based on the full version of Callaway theory of thermal conductivity is developed which provides a good approximation of the experimental data. The role of different resistive scattering processes, including due to minor isotope 13C atoms, defects, and grain boundaries, is estimated from the data analysis. The model predicts about a 37% increase of thermal conductivity for impurity and dislocation free polycrystalline chemical vapor deposition (CVD)-diamond with the 12C-enriched isotopic composition at room temperature.

Role of xenon additive in microwave plasma-assisted (H2+CH4) chemical vapor deposition of diamond thin film

1998 ◽  
Vol 84 (11) ◽  
pp. 6059-6063 ◽  
Author(s):  
Takeshi Hosomi ◽  
Tetsuro Maki ◽  
Takeshi Kobayashi ◽  
Yuji Yoshizako ◽  
Michio Taniguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Thin Film

MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-177-C5-188 ◽  
Author(s):  
L. VANDENBULCKE ◽  
P. BOU ◽  
R. HERBIN ◽  
V. CHOLET ◽  
C. BENY
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical
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