Molecular beam sampling to analyze the reaction mechanism of chemical vapor deposition

1996 ◽  
Vol 14 (4) ◽  
pp. 2337-2342 ◽  
Author(s):  
Y. Tsutsumi ◽  
M. Ikegawa ◽  
T. Usui ◽  
Y. Ichikawa ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor

scholarly journals Molecular Beam Sampling to Analyze the Reaction Mechanism of Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (4) ◽  
pp. 353-359
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehiko USUI ◽  
Yoko ICHIKAWA ◽  
Kazunori WATANABE ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor

scholarly journals Development of Analysing System for Chemical Vapor Deposition Reaction Mechanism Using Molecular Beam Sampling Method. (2).

Shinku ◽  
1995 ◽  
Vol 38 (5) ◽  
pp. 516-519 ◽  
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehito USUI ◽  
Jun'ichi KOBAYASHI ◽  
Kazunori WATANABE
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Sampling Method ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reaction

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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