Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)‐(7×7)

1996 ◽  
Vol 14 (2) ◽  
pp. 312-318 ◽  
Author(s):  
L. Andersohn ◽  
Th. Berke ◽  
U. Köhler ◽  
B. Voigtländer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Nucleation Behavior

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

scholarly journals Molecular Beam Sampling to Analyze the Reaction Mechanism of Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (4) ◽  
pp. 353-359
Author(s):  
Yoshitsugu TSUTSUMI ◽  
Masato IKEGAWA ◽  
Tatehiko USUI ◽  
Yoko ICHIKAWA ◽  
Kazunori WATANABE ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Reaction Mechanism ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor

Optical Approaches to Real-Time Analysis and Control of Crystal Growth

1990 ◽  
Vol 198 ◽  
Author(s):  
D. E. Aspnes
Keyword(s):  
Chemical Vapor Deposition ◽  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
Optical Methods ◽  
Dielectric Anisotropy

ABSTRACTA variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Spectroellipsometry (SE) and spectroreflectometry (SR), the older, primarily bulk-sensitive probes, are now augmented by new, primarily surface-sensitive probes such as reflectance-difference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Examples of real-time growth studies now include SE determinations of thicknesses and compositions of AlxGa1–xAs layers on GaAs by organometallic molecular beam epitaxy (OMMBE) to 10 Å thickness scales, RDS determinations of surface dielectric anisotropy spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and LLS determinations of the evolution of surface roughness during chemical vapor deposition (CVD) growth on Si. Proven capabilities suggest new applications, particularly to growth-interrupted and metastable systems.

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