Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy

1995 ◽  
Vol 13 (3) ◽  
pp. 602-606 ◽  
Author(s):  
W. Wu ◽  
S. L. Skala ◽  
J. R. Tucker ◽  
J. W. Lyding ◽  
A. Seabaugh ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Interface Characterization ◽  
Tunneling Diode

Electronic trap characterization of the Sc2O3∕La2O3 high-κ gate stack by scanning tunneling microscopy

2008 ◽  
Vol 92 (2) ◽  
pp. 022904 ◽  
Author(s):  
Y. C. Ong ◽  
D. S. Ang ◽  
K. L. Pey ◽  
Z. R. Wang ◽  
S. J. O’Shea ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Gate Stack

Manufacturing and Characterization of Nanostructures Using Scanning Tunneling Microscopy with Diamond Tip

2016 ◽  
Vol 42 ◽  
pp. 14-46 ◽  
Author(s):  
Oleg G. Lysenko ◽  
Vladimir I. Grushko ◽  
Sergey N. Dub ◽  
Eugene I. Mitskevich ◽  
Nikolay V. Novikov ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Measuring System ◽  
Scanning Tunneling ◽  
Surface Load ◽  
Tunneling Microscopy ◽  
Electromagnetic Probe ◽  
High Pressure High Temperature ◽  
Single Crystal Diamond ◽  
Selection Of

Nanoscale experiments with diamond tip that include processing, visualization and tunneling spectroscopy of the surface are presented. Single crystal diamond synthesized by the temperature gradient method under high pressure–high temperature (HPHT) conditions is proposed as a multifunctional tip for scanning tunneling microscopy (STM). Sequence of the procedures covering growing crystals with predetermined physical properties, selection of the synthesized crystals with the desired habit and their precise shaping have been developed. The original STM’s peculiarity is the electromagnetic probe-to-surface load measuring system. The results of fabrication and characterization of nanostructures for nanoelectronics, data storages and biology are demonstrated and discussed.

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