Growth of layered semiconductors by molecular‐beam epitaxy: Formation and characterization of GaSe, MoSe2, and phthalocyanine ultrathin films on sulfur‐passivated GaP(111)
1995 ◽
Vol 13
(3)
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pp. 1768-1775
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1991 ◽
Vol 30
(Part 2, No. 2B)
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pp. L306-L308
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1990 ◽
Vol 8
(3)
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pp. 1577-1581
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2001 ◽
Vol 228
(1)
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pp. 99-102
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Keyword(s):
2017 ◽
Vol 9
(36)
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pp. 30786-30796
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2021 ◽
Vol 135
◽
pp. 106099
Keyword(s):
1994 ◽
Vol 137
(1-2)
◽
pp. 187-194
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Keyword(s):