Growth of layered semiconductors by molecular‐beam epitaxy: Formation and characterization of GaSe, MoSe2, and phthalocyanine ultrathin films on sulfur‐passivated GaP(111)

1995 ◽  
Vol 13 (3) ◽  
pp. 1768-1775 ◽  
Author(s):  
C. Hammond ◽  
A. Back ◽  
M. Lawrence ◽  
K. Nebesny ◽  
P. Lee ◽  
...  
1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya

2017 ◽  
Vol 110 (2) ◽  
pp. 021601 ◽  
Author(s):  
Hawoong Hong ◽  
Jongjin Kim ◽  
Xinyue Fang ◽  
Seungbum Hong ◽  
T.-C. Chiang

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