Role of Ge in SiGe epitaxial growth using silane/germane gas‐source molecular beam epitaxy

M. Suemitsu; K‐J. Kim; N. Miyamoto

doi:10.1116/1.579128

Role of Ge in SiGe epitaxial growth using silane/germane gas‐source molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579128 ◽

1994 ◽

Vol 12 (4) ◽

pp. 2271-2275 ◽

Cited By ~ 8

Author(s):

M. Suemitsu ◽

K‐J. Kim ◽

N. Miyamoto

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Gas Source

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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

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Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90440-5 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 361-365 ◽

Cited By ~ 46

Author(s):

H. Okumura ◽

S. Misawa ◽

T. Okahisa ◽

S. Yoshida

Keyword(s):

Molecular Beam Epitaxy ◽

Nitrogen Source ◽

Epitaxial Growth ◽

Molecular Beam ◽

Microwave Plasma ◽

Gas Source

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Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.107430 ◽

1992 ◽

Vol 60 (7) ◽

pp. 824-826 ◽

Cited By ~ 30

Author(s):

Tatsuo Yoshinobu ◽

Hideaki Mitsui ◽

Iwao Izumikawa ◽

Takashi Fuyuki ◽

Hiroyuki Matsunami

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Crystalline ◽

Gas Source ◽

Lattice Matched

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Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1641 ◽

1996 ◽

Vol 35 (Part 1, No. 3) ◽

pp. 1641-1647 ◽

Cited By ~ 33

Author(s):

Satoru Tanaka ◽

R. Scott Kern ◽

James Bentley ◽

Robert F. Davis

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Epitaxial Growth ◽

Molecular Beam ◽

Defect Formation ◽

Gas Source

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Erratum: “Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth” [Appl. Phys. Lett. 79, 746 (2001)]

Applied Physics Letters ◽

10.1063/1.1490405 ◽

2002 ◽

Vol 81 (1) ◽

pp. 184-184

Author(s):

Takeshi Murata ◽

Hideki Nakazawa ◽

Yoshikazu Tsukidate ◽

Maki Suemitsu

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Adsorption Kinetics ◽

Molecular Beam ◽

Gas Source ◽

In Situ Observations

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1−xGex/Si(100) grown by gas-source molecular beam epitaxy

Thin Solid Films ◽

10.1016/s0040-6090(99)01114-1 ◽

2000 ◽

Vol 365 (1) ◽

pp. 147-150 ◽

Cited By ~ 2

Author(s):

Greg D. U'Ren ◽

Mark S Goorsky ◽

Kang L Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Misfit Strain ◽

Selective Epitaxial Growth ◽

Gas Source

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Epitaxial Growth of Si:C by Means of Gas Source Molecular Beam Epitaxy

ECS Meeting Abstracts ◽

10.1149/ma2008-02/37/2445 ◽

2008 ◽

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Gas Source

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Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy

Surface Science ◽

10.1016/0039-6028(92)91086-q ◽

1992 ◽

Vol 267 (1-3) ◽

pp. 50-53 ◽

Cited By ~ 22

Author(s):

S. Yoshida ◽

H. Okumura ◽

S. Misawa ◽

E. Sakuma

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Gas Source ◽

Cubic Gan

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Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.46917 ◽

1990 ◽

Vol 11 (1) ◽

pp. 18-20 ◽

Cited By ~ 9

Author(s):

H. Hirayama ◽

K. Koyama ◽

T. Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Selective Epitaxial Growth ◽

Gas Source ◽

Transistor Fabrication

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Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588866 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2381 ◽

Cited By ~ 30

Author(s):

Qi Xiang

Keyword(s):

Molecular Beam Epitaxy ◽

Mass Transport ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Gas Source

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