Excimer laser reactive ablation: An efficient approach for the deposition of high quality TiN films

1993 ◽  
Vol 11 (5) ◽  
pp. 2577-2582 ◽  
Author(s):  
I. N. Mihailescu ◽  
N. Chitica ◽  
V. S. Teodorescu ◽  
M. Luisa De Giorgi ◽  
G. Leggieri ◽  
...  
Keyword(s):  
Excimer Laser ◽  
High Quality ◽  
Tin Films ◽  
Efficient Approach

Deposition of high quality TiN films by excimer laser ablation in reactive gas

1993 ◽  
Vol 74 (9) ◽  
pp. 5781-5789 ◽  
Author(s):  
I. N. Mihailescu ◽  
N. Chitica ◽  
L. C. Nistor ◽  
M. Popescu ◽  
V. S. Teodorescu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
High Quality ◽  
Tin Films ◽  
Excimer Laser Ablation ◽  
Reactive Gas

Deposition of high quality SiO2 layers from TEOS by excimer laser

1989 ◽  
Vol 36 (1-4) ◽  
pp. 141-149 ◽  
Author(s):  
A. Klumpp ◽  
H. Sigmund
Keyword(s):  
Excimer Laser ◽  
High Quality

Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation

1996 ◽  
Author(s):  
Cheol-Min Park ◽  
Juhn-Suk Yoo ◽  
Byung-Hyuk Min ◽  
Dae-Kyu Moon ◽  
Min-Koo Han
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
High Quality ◽  
Excimer Laser Irradiation

Laser-Crystallized High Quality ITO on Plastic Substrates for Flexible Displays

2003 ◽  
Vol 769 ◽  
Author(s):  
Wonsuk Chung ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey ◽  
Michael O. Thompson
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Optical Transmittance ◽  
Visible Range ◽  
Type I ◽  
Laser Crystallization ◽  
High Quality ◽  
Flexible Displays ◽  
Plastic Substrates ◽  
Ito Films

AbstractIn the study presented here, we successfully demonstrated that high quality ITO films could be obtained on plastic substrates using Excimer laser crystallization. ITO films were first deposited at 10 °C on PEN substrates by DC magnetron sputtering, and then irradiated using a homogenized pulsed XeCl excimer laser beam (308 nm, 35 ns pulse duration) in a vacuum chamber. It was possible to reliably attain Type I ITO films with sheet resistances down to 35 Ω/΢, combined with 80 % optical transmittance in visible range. Well defined 2 μm lines could be obtained using simple HCl etchant at room temperature. We also developed Type II ITO films with a sheet resistance of 15 Ω/΢ and an optical transmittance of 80 % by means of laser annealing on plastic substrates, although these materials were found inferior to Type I in etching properties.

High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing

2011 ◽  
Vol 382 ◽  
pp. 26-29
Author(s):  
King Kung Wu ◽  
Wen Chung Chang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Power ◽  
Laser Annealing ◽  
Process Window ◽  
Excimer Laser Annealing ◽  
High Quality ◽  
Surface Ablation ◽  
Processing Ability

Amorphous silicon (a:Si) recrystalized to poly-silicon (poly:Si) in different gas environments by excimer laser annealing (ELA) is studied. Variations of threshold laser power for the generation of surface ablation in pure N2 gas and the mixture of N2:98% and O2:2% environments are also investigated, respectively. From experiments, it is found the combination of N2:98% and O2:2% gas can enhance the threshold laser power from 320mJ/cm2 to 390mJ/cm2 for the suppressing of surface ablation phenomenon. In the condition of average grain over 0.25um, the process window (i.e. laser power for processing ability) is 30mJ/cm2 for pure N2 only, but is 50mJ/cm2 for the combination of N2:98% and O2:2%.

A novel and efficient approach to prepare few-layer graphene with high quality

2018 ◽  
Vol 228 ◽  
pp. 183-186 ◽  
Author(s):  
Mengjie Liu ◽  
Ting Liu ◽  
Wenyu Wu ◽  
Xuesha Zhang ◽  
Ruijun Zhang
Keyword(s):  
High Quality ◽  
Efficient Approach ◽  
Layer Graphene ◽  
Few Layer Graphene
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