Investigation of the kinetics of digermane chemisorption and reaction product desorption in thin film growth of germanium

1993 ◽  
Vol 11 (5) ◽  
pp. 2463-2471 ◽  
Author(s):  
Gyula Eres ◽  
J. W. Sharp
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Kinetics Of

scholarly journals MOCVD kinetics of strontium bismuth tantalate thin film growth

2004 ◽  
Vol 44 (5) ◽  
pp. 375-379 ◽  
Author(s):  
Mindaugas Šilinskas ◽  
Marco Lisker ◽  
Bodo Kalkofen ◽  
Serhiy Matichyn ◽  
Edmund P. Burte
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Strontium Bismuth Tantalate ◽  
Kinetics Of

On the kinetics of thin-film growth under high adatom concentrations

1977 ◽  
Vol 39 (1) ◽  
pp. 327-330 ◽  
Author(s):  
L. N. Aleksandrov ◽  
I. A. Entin
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Kinetics Of

Synthesis of biocompatible surfaces by different techniques

2002 ◽  
Vol 724 ◽  
Author(s):  
E. Garreta ◽  
T. Fernández ◽  
S. Borrós ◽  
J. Esteve ◽  
C. Colominas ◽  
...  
Keyword(s):  
Thin Film ◽  
Acrylic Acid ◽  
Plasma Polymerization ◽  
Film Growth ◽  
Porous Scaffold ◽  
Sol Gel ◽  
Thin Film Growth ◽  
X Ray ◽  
Kinetics Of ◽  
Polymerization Conditions

AbstractIn the present work, a sol-gel method of HA synthesis has been developed using different calcium and phosphorous precursors. In order to make a porous scaffold, HA aerogel formation and HA liofilization processes have been studied. The liofilized HA and the HA aerogels have been characterized by SEM-EDX and X-Ray difraction. Finally, so as to improve the biocompatibility and the bioadhesion of the HA scaffolds, different plasma polymerization techniques have been studied. Acrylic acid has been polymerized using plasma polymerization with a radiofrequency source. Different radiofrequency source powers and reactor designs have been tryed. The kinetics of the thin film growth have been studied and the optimal polymerization conditions have been established. Polymeric layers have been characterized by IR and XPS.

Kinetics of Rapid Thermal Oxidation : Critical Analysis of Experimental Results

1989 ◽  
Vol 146 ◽  
Author(s):  
J-M. Dilhac
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Critical Analysis ◽  
Film Growth ◽  
Oxide Thickness ◽  
Temperature Sensors ◽  
Experimental Results ◽  
Thin Film Growth ◽  
Experimental Kinetics ◽  
Kinetics Of

ABSTRACTIn this paper, we present experimental kinetics data from the literature, and the large discrepancies between them is discussed. An analytical equation for oxide thickness vs. oxidation time and temperature, adequatly describing thin film growth, is used to estimate the temperature error likely to explain the discrepancy between the above data. We also assess this error by considering the temperature sensors.

Investigation of the Kinetics of Surface-Limited thin Film Growth of SiGe Alloys by CVD of Si2H6/Ge2 H6 Mixtures

1992 ◽  
Vol 282 ◽  
Author(s):  
J. W. Sharp ◽  
Gyula Eres
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Gas Mixtures ◽  
Thin Film Growth ◽  
Probe Laser ◽  
Desorption Kinetics ◽  
Alloy Thin Film ◽  
Strong Temperature Dependence ◽  
Time Resolved ◽  
Kinetics Of

ABSTRACTThe kinetics of surface-limited thin film growth of SiGe alloys was investigated by time-resolved surface differential reflectometry. The source gas, mixtures of disilane and digermane in ratios from 1:1 to 6:1 in helium carrier gas, was delivered to a heated Si(001) substrate by a fast-acting pulsed molecular jet valve. The adsorption and desorption kinetics were determined from the surface differential reflectance signal obtained using a polarized, high-stability HeNe probe laser. Thin film growth was studied in the temperature range of 400–600°C on Si(001) substrates. Preferential incorporation of digermane into the film produces an alloy composition that depends upon but does not mirror the gas composition. For all gas mixtures, there is a strong temperature dependence of the rate at which the adsorption layer decomposes into film plus by-product. The kinetic data and the alloy compositions provide a basis for deducing some of the characteristics of the reaction sequence that leads to SiGe alloy thin film growth.

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