Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes

1993 ◽  
Vol 11 (4) ◽  
pp. 945-951 ◽  
Author(s):  
T. Yasuda ◽  
Y. Ma ◽  
Y. L. Chen ◽  
G. Lucovsky ◽  
D. Maher
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