Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition of SiO2 on plasma‐processed Si substrates

1992 ◽  
Vol 10 (4) ◽  
pp. 781-787 ◽  
Author(s):  
Yi Ma ◽  
T. Yasuda ◽  
S. Habermehl ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Si Substrates

Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Rong Z. Qian ◽  
D. Kinosky ◽  
A. Mahajan ◽  
S. Thomas ◽  
J. Fretwell ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Remote Plasma ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Si Substrates ◽  
Wide Range

ABSTRACTRemote Plasma-enhanced Chemical Vapor Deposition (RPCVD) has been successfully used to grow GexSi1−x/Si (x = 0.1 – 1.0) heteroepitaxial structures at low temperatures (∼450°C). This technique utilizes a noble gas (Ar or He) r-f plasma to decompose reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions in the gas phase as well as on the substrate surface. Growth of pure Ge on Si is of great interest because it provides a promising technique for making suitable low-cost substrates for thin-film Ge photodetectors as well as GaAs devices on Si substrates. The realization of these applications depends on the ability to grow high-quality epitaxial Ge layers on Si substrates. Since GaAs is lattice matched to Ge, growth of Ge layers on Si substrates with good crystalline perfection would permit the integration of GaAs and Si devices. Islanding was observed after the growth of pure Ge films directly on Si(100) for a wide range of plasma powers (7W ∼ 16W) in RPCVD. Cross-sectional TEM analysis showed that the islands have complicated facet structures, including {311} planes. Graded Gex Si1−x buffer layers with different Ge profiles have been used prior to the growth of Ge. It was found that uniform Ge films can be obtained using a buffer with an abrupt Ge profile, and the dislocation density in the Ge film decreases with increasing distance from the substrate.

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

2012 ◽  
Vol 523 ◽  
pp. 25-28 ◽  
Author(s):  
Meng Yang ◽  
Shuichi Ogawa ◽  
Susumu Takabayashi ◽  
Taiichi Otsuji ◽  
Yuji Takakuwa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Si Substrates
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