Formation of compound semiconductors by electrochemical atomic layer epitaxy

1992 ◽  
Vol 10 (4) ◽  
pp. 886-891 ◽  
Author(s):  
D. Wayne Suggs ◽  
Ignacio Villegas ◽  
Brian W. Gregory ◽  
John L. Stickney
Keyword(s):  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Electrochemical Atomic-Layer Epitaxy: Electrodeposition of III-V and II-VI Compound Semiconductors

1999 ◽  
Vol 581 ◽  
Author(s):  
Travis L. Wade ◽  
Billy H. Flowers ◽  
Raman Vaidyanathan ◽  
Kenneth Mathe ◽  
Clinton B. Maddox ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Infrared Reflection ◽  
Epitaxial Deposition ◽  
Electrochemical Atomic Layer Epitaxy

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

Formation of CdTe and GaAs by Electrochemical Atomic Layer Epitaxy (ECALE)

1991 ◽  
Vol 222 ◽  
Author(s):  
D. Wayne Suggs ◽  
Ignacio Villegas ◽  
Brian W. Gregory ◽  
John L. Stickney
Keyword(s):  
Surface Analysis ◽  
Electrochemical Cell ◽  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Technique ◽  
Analysis Instrument ◽  
Electrochemical Atomic Layer Epitaxy ◽  
Analysis Environment

ABSTRACTThe principles of Atomic Layer Epitaxy (ALE) have been applied to the formation of compound semiconductors by an electrochemical technique, referred to as Electrochemical Atomic Layer Epitaxy (ECALE). Atomic layers of the component elements are alternately electrodeposited at underpotential (UPD) from separate solutions and at separate potentials. Results are presented concerning the structures of both CdTe and GaAs deposits formed by ECALE. Studies were performed using singlecrystalline Au electrodes in a UHV surface analysis instrument coupled directly with an electrochemical cell. This instrument was used in order to prevent corruption by contact with air during transfer to the surface analysis environment.

Sign in / Sign up

Export Citation Format

Share Document