A study of the secondary‐ion yield change on the GaAs surface caused by the O+2 ion‐beam‐induced rippling

1991 ◽  
Vol 9 (4) ◽  
pp. 2247-2252 ◽  
Author(s):  
A. Karen ◽  
K. Okuno ◽  
F. Soeda ◽  
A. Ishitani
Keyword(s):  
Ion Beam ◽  
Gaas Surface ◽  
Yield Change ◽  
Secondary Ion

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Effect of primary ion beam parameters on the secondary ion emission of biomolecules from liquid matrixes

1987 ◽  
Vol 59 (15) ◽  
pp. 1930-1937 ◽  
Author(s):  
Richard B. Cole ◽  
Christian. Guenat ◽  
J. Ronald. Hass ◽  
Richard W. Linton
Keyword(s):  
Ion Beam ◽  
Secondary Ion Emission ◽  
Beam Parameters ◽  
Ion Emission ◽  
Secondary Ion

The influence of secondary ion beam irradiation on the formation of Si nanocrystals during dual ion beam sputtering

2005 ◽  
Vol 478 (1-2) ◽  
pp. 116-120 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Sputtering ◽  
Ion Beam Irradiation ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Secondary Ion

Metal cluster complex primary ion beam source for secondary ion mass spectrometry (SIMS)

Vacuum ◽  
2009 ◽  
Vol 84 (5) ◽  
pp. 544-549 ◽  
Author(s):  
Yukio Fujiwara ◽  
Kouji Watanabe ◽  
Hidehiko Nonaka ◽  
Naoaki Saito ◽  
Atsushi Suzuki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Cluster ◽  
Ion Beam ◽  
Cluster Complex ◽  
Beam Source ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals Helium ion microscope – secondary ion mass spectrometry for geological materials

2020 ◽  
Vol 11 ◽  
pp. 1504-1515
Author(s):  
Matthew R Ball ◽  
Richard J M Taylor ◽  
Joshua F Einsle ◽  
Fouzia Khanom ◽  
Christelle Guillermier ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Isotopic Analysis ◽  
Green Economy ◽  
Case Scenario ◽  
Helium Ion ◽  
Ion Mass Spectrometry ◽  
Focussed Ion Beam ◽  
Secondary Ion

The helium ion microscope (HIM) is a focussed ion beam instrument with unprecedented spatial resolution for secondary electron imaging but has traditionally lacked microanalytical capabilities. With the addition of the secondary ion mass spectrometry (SIMS) attachment, the capabilities of the instrument have expanded to microanalysis of isotopes from Li up to hundreds of atomic mass units, effectively opening up the analysis of all natural and geological systems. However, the instrument has thus far been underutilised by the geosciences community, due in no small part to a lack of a thorough understanding of the quantitative capabilities of the instrument. Li represents an ideal element for an exploration of the instrument as a tool for geological samples, due to its importance for economic geology and a green economy, and the difficult nature of observing Li with traditional microanalytical techniques. Also Li represents a “best-case” scenario for isotopic measurements. Here we present details of sample preparation, instrument sensitivity, theoretical, and measured detection limits for both elemental and isotopic analysis as well as practicalities for geological sample analyses of Li alongside a discussion of potential geological use cases of the HIM–SIMS instrument.

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