Control of ion energy and flux in a dual radio frequency excitation magnetron sputtering discharge

1991 ◽  
Vol 9 (6) ◽  
pp. 3090-3099 ◽  
Author(s):  
Hans‐Dirk Löwe ◽  
Haruhiro H. Goto ◽  
Tadahiro Ohmi
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Ion Energy ◽  
Radio Frequency Excitation ◽  
Frequency Excitation

Avalanche induced rapid impedance change and electron power absorption during gas breakdown under radio-frequency excitation

2020 ◽  
Vol 29 (12) ◽  
pp. 12LT03
Author(s):  
Yong-Xin Liu ◽  
Xiang-Yu Wang ◽  
Quan-Zhi Zhang ◽  
Zoltán Donkó ◽  
Kai Zhao ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Impedance Change ◽  
Power Absorption ◽  
Radio Frequency Excitation ◽  
Frequency Excitation ◽  
Gas Breakdown

cw He‐Kr+laser with transverse radio frequency excitation

1994 ◽  
Vol 64 (4) ◽  
pp. 397-399 ◽  
Author(s):  
N. Reich ◽  
J. Mentel ◽  
G. Jakob ◽  
J. Mizeraczyk
Keyword(s):  
Radio Frequency ◽  
Radio Frequency Excitation ◽  
Frequency Excitation

Hyrogenated Amorphous Silicon with High Growth Rate, Gas Utilization and Homogeneous Deposition by Amplitude Modulated Vhf-Pecvd for Solar Cell Application

2002 ◽  
Vol 715 ◽  
Author(s):  
J.K Rath ◽  
A.C.W. Biebericher ◽  
R. Jimenez Zambrano ◽  
R.E.I. Schropp ◽  
W. F. van der Weg ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
High Growth ◽  
Utilization Efficiency ◽  
Gas Flows ◽  
Solar Cell Application ◽  
Gas Utilization ◽  
Radio Frequency Excitation ◽  
Frequency Excitation

AbstractHydrogenated amorphous silicon samples have been deposited by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD), using a square-wave amplitudemodulated radio-frequency excitation. It is observed that the gas-utilization efficiency improves by a considerable amount when amplitude modulation is combined with a reduction in the gas flows. Using a conventional continuous wave (cw) 50 MHz plasma with SiH4 and H2 gas flows of 30 sccm each at a pressure of 0.2 mbar, the gas-utilization efficiency is about 8%. It increases up to 50%, by modulating the amplitude of the radio-frequency excitation signal and reducing both gas flows to 10 sccm, keeping the pressure constant. In this case, the deposition rate amounted to 0.55 nm/s; which is twice as large as compared to the deposition rate of a cw deposition. Device-quality opto-electronic properties are obtained under these conditions. The refractive index at 2 eV is about 4.25 and the microstructure parameter has a value around 0.02. The materials exhibited a low defect density (CPM) which is in the order of 3-8x1015 per cubic centimeter and photo-to-dark-conductivity ratio of 4-6x106. N-i-p solar cells of size 0.16 cm2 deposited on 10cmx10cm stainless steel (SS) substrate in the configuration SS/n-a-Si:H/i-a- Si:H/buffer/p-μc-Si/ITO/Ag grid (without back reflector) using amorphous silicon i-layer made by amplitude-modulated VHF plasma CVD showed an efficiency of 6.5%. This is a similar efficiency to the cell with standard device-quality cw a-Si:H in the same n-i-p structure, but at a high growth of 0.55 nm/s and gas utilization of ∼50%.

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