Columnar microstructure and stress measurements in amorphous W0.75Si0.25 thin films

1990 ◽  
Vol 8 (2) ◽  
pp. 885-890 ◽  
Author(s):  
R. E. Thomas ◽  
J. H. Perepezko ◽  
J. D. Wiley
Keyword(s):  
Thin Films ◽  
Columnar Microstructure ◽  
Stress Measurements

In Situ Measurement of Stresses in Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Reinhard Abermann
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Adsorption ◽  
Gas Diffusion ◽  
Island Growth ◽  
Stress Measurements ◽  
Growth Modes ◽  
Columnar Grain ◽  
Selection Of

ABSTRACTIn this paper the results of experiments are summarized in which the internal stress (i.e. force per unit width) of thin films was measured in situ under UHV conditions with a bending beam apparatus. It is demonstrated that characteristic types of stress vs. thickness curves can be correlated with different growth modes (i.e. columnar grain growth and island growth) caused by differences in the adatom mobility of the deposited material. With a selection of thin film systems it is then shown that stress measurements can be used to study the effect of gas incorporation, of gas diffusion from the substrate, of reaction with the substrate and of the substrate temperature on the growth and structure of a thin film. Finally it will be demonstrated that stress measurements can even be used to study gas adsorption on vapor deposited films.

Nanosized columnar microstructure and related properties of electron gun deposited Al2O3 thin films

Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 211-214 ◽  
Author(s):  
E. Krumov ◽  
V. Mankov ◽  
K. Starbova
Keyword(s):  
Thin Films ◽  
Electron Gun ◽  
Columnar Microstructure

Anisotropic thermal conductivity of rare earth–transition metal thin films

1992 ◽  
Vol 7 (2) ◽  
pp. 329-334 ◽  
Author(s):  
L.J. Shaw-Klein ◽  
T.K. Hatwar ◽  
S.J. Burns ◽  
S.D. Jacobs ◽  
J.C. Lambropoulos
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Rare Earth ◽  
Transition Metal ◽  
Columnar Microstructure ◽  
Deposition Pressure ◽  
Metal Thin Films ◽  
Anisotropic Thermal Conductivity ◽  
Out Of Plane ◽  
Order Of Magnitude

Thermal conductivity measurements were performed on several amorphous rare earth transition metal thin films of varying microstructure. The thermal conductivity perpendicular to the plane of the film, measured by the thermal comparator method, was compared with the thermal conductivity value measured parallel to the plane of the film. The latter value was obtained by converting electrical conductivity values to thermal conductivity via the Wiedemann–Franz relationship. As expected, the columnar microstructure induced during the sputter deposition of the thin films causes an anisotropy in the thermal conductivity values, with the in-plane values consistently lower than the out-of-plane values. The effect is most pronounced for the more columnar films deposited at higher pressure, for which the in-plane thermal conductivity, 0.3 W/mK, is an order of magnitude lower than the out-of-plane thermal conductivity, 4.3 W/mK. The thermal conductivity out of the plane of the film decreased with increasing deposition pressure, due to the decreasing film density.

Lpcvd Polycrystalline Silicon Thin Films: The Evolution of Structure, Texture and Stress

1990 ◽  
Vol 202 ◽  
Author(s):  
P. Krulevitch ◽  
Tai D. Nguyen ◽  
G. C. Johnson ◽  
R. T. Howe ◽  
H. R. Wenk ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Compressive Stress ◽  
Polycrystalline Silicon ◽  
Amorphous State ◽  
Processing Conditions ◽  
Columnar Microstructure ◽  
Silicon Thin Films ◽  
Evolution Of Structure ◽  
Polycrystalline Silicon Films

ABSTRACTAn investigation of undoped LPCVD polycrystalline silicon films deposited at temperatures ranging from 605 to 700 C and silane pressures from 300 to 550 mTorr revealed large variations in stress with processing conditions and a correlation between stress and texture. TEM and HRTEM analysis show that morphology differences also exist. At lower temperatures (≈605 C) and higher pressures (≈400 mTorr), the films appear to deposit in an amorphous state and crystallize during the deposition to form microstructures characterized by equi-axed grains, tensile residual stress, and a texture with {110} and {11/} (/=2 or 3) components. Higher temperatures (between 620 and 650 C) produce films that nucleate at the Si02 interface, creating a {110} oriented columnar microstructure. At 700 C, the grains are still columnar, but the dominant texture is {100}. Films deposited at temperatures greater than 620 C exhibit compressive stress, and some contain regions of hexagonal silicon. This paper proposes possible causes of the varying stresses, textures, and microstructures in the films.

The influence of columnar microstructure on diffusion reaction between Ti thin films and aluminum nitride ceramics

2019 ◽  
Vol 380 ◽  
pp. 125057
Author(s):  
Xiang Li ◽  
Hongkai Zhang ◽  
Chen Wang ◽  
Tingting Wang ◽  
Terigele ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Diffusion Reaction ◽  
Columnar Microstructure ◽  
Nitride Ceramics
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