The crystallographic and electroluminescent characteristics of ZnS:Mn thin films prepared by radio frequency ion‐plating technique

1990 ◽  
Vol 8 (1) ◽  
pp. 43-48
Author(s):  
Shigeyuki Kiyota ◽  
Keiko Terai ◽  
Norifumi Kikuchi ◽  
Takuma Kojima ◽  
N. Shin‐ichi Takahashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Ion Plating ◽  
Plating Technique

scholarly journals Mechanical Properties of Optical Dielectric Thin Films Deposited by the Ion Plating Technique

1997 ◽  
Vol 8 (4-5) ◽  
pp. 251-260 ◽  
Author(s):  
Christine Mahodaux ◽  
Hervé Rigneault ◽  
Hugues Giovannini ◽  
Ludovic Escoubas ◽  
Paul Morreti
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Thin Films ◽  
Ion Plating ◽  
Plating Technique ◽  
Optical Dielectric

Study on Arc Ion Plating Nitride Films of Microscopic Morphology and Micro-Hardness

2011 ◽  
Vol 306-307 ◽  
pp. 274-279
Author(s):  
Qing Tao ◽  
Yan Wei Sui ◽  
Sun Zhi ◽  
Wei Song
Keyword(s):  
Thin Films ◽  
Steel Substrate ◽  
Nitride Film ◽  
Composition Analysis ◽  
Micro Hardness ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Tin Thin Films ◽  
Research Procedure ◽  
Microscopic Morphology

AlN and TiN thin films are widely used in electronic devices and acoustic material and other fields because of its unique merit, the preparation of nitride thin films by using the arc ion plating has not been a systematic and deep study. The article presents our research procedure which the AlN and TiN thin films are deposited on stainless steel substrate by arc ion plating (AIP). The characteristics of thin films, for example microstructure, morphology, composition analysis and hardness, are examined and analyzed. The results showed that: Droplet-like particles appear in the microstructure of nitride thin films, and the grain size of droplet-like particles in AlN thin films is greater than in TiN thin films. The micro-hardness of nitride films preparation in experiment has improved significantly, and establish firmly basic for extending the application field of nitride film.

Tunable optoelectronic properties of radio frequency sputter-deposited Sb2Se3 thin films: Role of growth angle and thickness

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 716-723
Author(s):  
Alapan Dutta ◽  
Ranveer Singh ◽  
Sanjeev Kumar Srivastava ◽  
Tapobrata Som
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Optoelectronic Properties ◽  
Growth Angle ◽  
Sputter Deposited

Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films

2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Zinc Stannate ◽  
Magnetron Sputter ◽  
Sputter Deposited

Nitrogen Doping into Cu2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2765-2768 ◽  
Author(s):  
Shogo Ishizuka ◽  
Shinya Kato ◽  
Takahiro Maruyama ◽  
Katsuhiro Akimoto
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nitrogen Doping ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu2o Thin Films

Radio‐Frequency Reactively Sputtered  VO  x Thin Films Deposited at Different Oxygen Flows

1998 ◽  
Vol 145 (2) ◽  
pp. 706-711 ◽  
Author(s):  
A. Lourenço ◽  
A. Gorenstein ◽  
S. Passerini ◽  
W. H. Smyrl ◽  
M. C. A. Fantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency
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