Thermal noise in vacuum scanning tunneling microscopy at zero bias voltage

1990 ◽  
Vol 8 (1) ◽  
pp. 590-593 ◽  
Author(s):  
R. Möller ◽  
A. Esslinger ◽  
B. Koslowski
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Thermal Noise ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Zero Bias

scholarly journals Characteristics of sulfur atoms adsorbed on Ag(100), Ag(110), and Ag(111) as probed with scanning tunneling microscopy: experiment and theory

2019 ◽  
Vol 21 (20) ◽  
pp. 10540-10551 ◽  
Author(s):  
Peter M. Spurgeon ◽  
Da-Jiang Liu ◽  
Holly Walen ◽  
Junepyo Oh ◽  
Hyun Jin Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment ◽  
Bias Voltage Dependence

Sulfur atoms on Ag(100) exhibit bias voltage dependence.

Bias-Voltage Dependence in Atomic-Scale Spin Polarized Scanning Tunneling Microscopy of Mn3N2 (010)

2003 ◽  
Vol 803 ◽  
Author(s):  
Arthur R. Smith ◽  
Rong Yang ◽  
Haiqiang Yang
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Height Profile ◽  
Magnetic Components ◽  
Spin Polarized ◽  
Manganese Nitride

ABSTRACTAtomic-scale spin-polarized scanning tunneling microscopy results on the manganese nitride Mn3N2 (010) surface are presented. The images show the row-wise antiferromagnetic structure of the surface. It is shown that the bias voltage between tip and sample affects both the magnetic and non-magnetic components of the height profile. In particular, a reversal of the magnetic contrast is shown to occur at a certain bias voltage.

Nanolithography on Graphene by Using Scanning Tunneling Microscopy in a Methanol Environment

2013 ◽  
Vol 19 (6) ◽  
pp. 1569-1574 ◽  
Author(s):  
Chulsu Kim ◽  
Joonkyu Park ◽  
Yongho Seo ◽  
Jinho Ahn ◽  
In-Sung Park
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Line Width ◽  
Bias Voltage ◽  
Tunneling Current ◽  
Gas Pressure ◽  
Scanning Tunneling ◽  
Multilayer Graphene ◽  
Optimum Conditions ◽  
Tunneling Microscopy ◽  
Volatile Liquids

AbstractSince it was discovered in 2004, graphene has attracted enormous attention as an emerging material for future devices, but it has been found that conventional lithographic processes based on polymer resist degrade its intrinsic performance. Recently, our group studied a resist-free scanning tunneling microscopy-based lithography in various atmospheres by injecting volatile liquids into a chamber. In this study, multilayer graphene was scanned and etched by controlling bias voltage under methanol pressure. We focused on improving patterning results in terms of depth and line width, while the previous study was performed to find an optimum gas environment for patterning on a graphite surface. Specifically, we report patterning outputs depending on conditions of voltage, current, and pressure. The optimum conditions for methanol environment etching were a gas pressure in the range of 41–50 torr, a −4 V tip bias, and a 2 nA tunneling current.

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