scholarly journals Role of bias voltage and tunneling current in the perpendicular displacements of freestanding graphene via scanning tunneling microscopy

2013 ◽  
Vol 31 (4) ◽  
pp. 04D103 ◽  
Author(s):  
Peng Xu ◽  
Steven D. Barber ◽  
Matthew L. Ackerman ◽  
James Kevin Schoelz ◽  
Paul M. Thibado
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Tunneling Current ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Nanolithography on Graphene by Using Scanning Tunneling Microscopy in a Methanol Environment

2013 ◽  
Vol 19 (6) ◽  
pp. 1569-1574 ◽  
Author(s):  
Chulsu Kim ◽  
Joonkyu Park ◽  
Yongho Seo ◽  
Jinho Ahn ◽  
In-Sung Park
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Line Width ◽  
Bias Voltage ◽  
Tunneling Current ◽  
Gas Pressure ◽  
Scanning Tunneling ◽  
Multilayer Graphene ◽  
Optimum Conditions ◽  
Tunneling Microscopy ◽  
Volatile Liquids

AbstractSince it was discovered in 2004, graphene has attracted enormous attention as an emerging material for future devices, but it has been found that conventional lithographic processes based on polymer resist degrade its intrinsic performance. Recently, our group studied a resist-free scanning tunneling microscopy-based lithography in various atmospheres by injecting volatile liquids into a chamber. In this study, multilayer graphene was scanned and etched by controlling bias voltage under methanol pressure. We focused on improving patterning results in terms of depth and line width, while the previous study was performed to find an optimum gas environment for patterning on a graphite surface. Specifically, we report patterning outputs depending on conditions of voltage, current, and pressure. The optimum conditions for methanol environment etching were a gas pressure in the range of 41–50 torr, a −4 V tip bias, and a 2 nA tunneling current.

scholarly journals Towards Laterally Resolved Ferromagnetic Resonance with Spin-Polarized Scanning Tunneling Microscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 827
Author(s):  
Marie Hervé ◽  
Moritz Peter ◽  
Timofey Balashov ◽  
Wulf Wulfhekel
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Ferromagnetic Resonance ◽  
Tunneling Current ◽  
Magnetic Vortex ◽  
Scanning Tunneling ◽  
Tunneling Junction ◽  
Resonance Signal ◽  
Tunneling Microscopy ◽  
Spin Polarized ◽  
Local Detection

We used a homodyne detection to investigate the gyration of magnetic vortex cores in Fe islands on W(110) with spin-polarized scanning tunneling microscopy at liquid helium temperatures. The technique aims at local detection of the spin precession as a function of frequency using a radio-frequency (rf) modulation of the tunneling bias voltage. The gyration was excited by the resulting spin-polarized rf current in the tunneling junction. A theoretical analysis of different contributions to the frequency-dependent signals expected in this technique is given. These include, besides the ferromagnetic resonance signal, also signals caused by the non-linearity of the I ( U ) characteristics. The vortex gyration was modeled with micromagnetic finite element methods using realistic parameters for the tunneling current, its spin polarization, and the island shape, and simulations were compared with the experimental results. The observed signals are presented and critically analyzed.

ON THE ROLE OF KINKS AND STRAIN IN HETEROEPITAXIAL GROWTH: AN STM STUDY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 673-677
Author(s):  
E. LUNDGREN ◽  
M. SCHMID ◽  
G. LEONARDELLI ◽  
A. HAMMERSCHMID ◽  
B. STANKA ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Heteroepitaxial Growth ◽  
Tunneling Microscopy ◽  
Exchange Diffusion

Interlayer diffusion of Co over steps of vacancy islands on the Pt(111) surface as studied by scanning tunneling microscopy is presented. It is demonstrated that Co atoms descend Pt steps by an exchange diffusion process at the step edge with the Pt atoms. Further, the exchange diffusion process is observed to occur at the corners (kinks) of the vacancy islands. The importance of kinks concerning whether the growth mode of a heteropitaxial film is two-dimensional or three-dimensional is demonstrated for the case of thin Co films on Pt(111). We argue that the strain in the Co film is to a large extent responsible for the kink formation.

scholarly journals Characteristics of sulfur atoms adsorbed on Ag(100), Ag(110), and Ag(111) as probed with scanning tunneling microscopy: experiment and theory

2019 ◽  
Vol 21 (20) ◽  
pp. 10540-10551 ◽  
Author(s):  
Peter M. Spurgeon ◽  
Da-Jiang Liu ◽  
Holly Walen ◽  
Junepyo Oh ◽  
Hyun Jin Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment ◽  
Bias Voltage Dependence

Sulfur atoms on Ag(100) exhibit bias voltage dependence.

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