Al surface mobility on Si(111) during initial stages of ionized cluster beam deposition

1988 ◽  
Vol 6 (3) ◽  
pp. 1552-1556 ◽  
Author(s):  
L. L. Levenson ◽  
M. Asano ◽  
T. Tanaka ◽  
H. Usui ◽  
I. Yamada ◽  
...  
Keyword(s):  
Cluster Beam ◽  
Surface Mobility ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Aluminum surface mobility on two types of silicon oxide during ionized cluster beam deposition

1990 ◽  
Vol 15 (2) ◽  
pp. 159-162 ◽  
Author(s):  
L. L. Levenson ◽  
A. B. Swartzlander ◽  
H. Usui ◽  
I. Yamada
Keyword(s):  
Silicon Oxide ◽  
Aluminum Surface ◽  
Cluster Beam ◽  
Surface Mobility ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Aluminum Atom Surface Mobility on SiO2 During Ionized Cluster Beam Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Leonard L. Levenson ◽  
Amy B. Swartzlander ◽  
Hiroaki Usui ◽  
Isao Yamada ◽  
Toshinori Takagi
Keyword(s):  
Aluminum Atom ◽  
Chamber Pressure ◽  
Cluster Beam ◽  
Diffusion Distance ◽  
Surface Mobility ◽  
Scanning Auger Microprobe ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Mask Edge ◽  
Beam Deposition

ABSTRACTAn ionized cluster beam (ICB) source was used to deposit Al onto SiO2 substrates. A 60 gtm diameter wire held at the substrate served as a mask. After Al deposition, the wire was removed and the masked area was examined by scanning electron microscopy (SEM) and by scanning Auger microprobe (SAM). The ICB source was operated at 0, 3, and 6 kV acceleration voltages. The substrate was held at 80°, 200°, and 400°C during Al depositions. The Al deposition rate averaged 240 A per min. The chamber pressure during deposition was 2×10-6 Torr. The diffusion distance of Al under the mask edge was determined from the SEM micrographs and SAM line scans. The maximum diffusion distance for all acceleration voltages occured at a substate temperature of 200°C. The maximum diffusion distance at 200°C was 29 μm at 6 kV acceleration voltage. The minimum diffusion distance was 12 μm at 400°C for an acceleration voltage of 6 kV.

Mass selection of neutral clusters in Low‐Energy Cluster Beam Deposition experiments: Is it realistic?

1994 ◽  
Vol 64 (10) ◽  
pp. 1212-1214 ◽  
Author(s):  
J. F. Roux ◽  
B. Cabaud ◽  
G. Fuchs ◽  
D. Guillot ◽  
A. Hoareau ◽  
...  
Keyword(s):  
Low Energy ◽  
Mass Selection ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Energy Cluster ◽  
Selection Of ◽  
Beam Deposition

scholarly journals Flexible and biocompatible microelectrode arrays fabricated by supersonic cluster beam deposition on SU-8

2011 ◽  
Vol 21 (4) ◽  
pp. 045013 ◽  
Author(s):  
Mattia Marelli ◽  
Giorgio Divitini ◽  
Cristian Collini ◽  
Luca Ravagnan ◽  
Gabriele Corbelli ◽  
...  
Keyword(s):  
Microelectrode Arrays ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Ionized-Cluster Beam Deposition

1975 ◽  
pp. 341-346 ◽  
Author(s):  
T. Takagi ◽  
I. Yamada ◽  
K. Yanagawa
Keyword(s):  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Gas Sensor Arrays by Supersonic Cluster Beam Deposition

2019 ◽  
pp. 282-284
Author(s):  
E. Barborini ◽  
M. Leccardi ◽  
G. Bertolini ◽  
O. Rorato ◽  
M. Franchi ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Sensor Arrays ◽  
Cluster Beam ◽  
Cluster Beam Deposition ◽  
Beam Deposition ◽  
Gas Sensor Arrays

Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition

1997 ◽  
Vol 56 (11) ◽  
pp. 6958-6964 ◽  
Author(s):  
M. Ehbrecht ◽  
B. Kohn ◽  
F. Huisken ◽  
M. A. Laguna ◽  
V. Paillard
Keyword(s):  
Raman Spectra ◽  
Silicon Films ◽  
Cluster Beam ◽  
Resonant Raman ◽  
Cluster Beam Deposition ◽  
Beam Deposition
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