Magnetic field gradient effects on ion energy for electron cyclotron resonance microwave plasma stream

1988 ◽  
Vol 6 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Morito Matsuoka ◽  
Ken’ichi Ono
Keyword(s):  
Magnetic Field ◽  
Field Gradient ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Magnetic Field Gradient ◽  
Plasma Stream ◽  
Ion Energy ◽  
Gradient Effects ◽  
Resonance Microwave

High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient

1991 ◽  
Vol 30 (Part 1, No. 11B) ◽  
pp. 3142-3146 ◽  
Author(s):  
Nobuo Fujiwara ◽  
Hisaharu Sawai ◽  
Masahiro Yoneda ◽  
Kyusaku Nishioka ◽  
Kazuo Horie ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Gradient ◽  
Plasma Etching ◽  
Cyclotron Resonance ◽  
High Performance ◽  
Electron Cyclotron Resonance ◽  
Magnetic Field Gradient ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Dependence of the a-Si:H Defect Density of States on the Magnetic Field Profile of an Electron Cyclotron Resonance Microwave Plasma

1992 ◽  
Vol 258 ◽  
Author(s):  
F.S. Pool ◽  
J.M. Essick ◽  
Y.H. Shing ◽  
R.T. Mather
Keyword(s):  
Magnetic Field ◽  
Density Of States ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Defect Density ◽  
Electron Cyclotron ◽  
Field Profile ◽  
Magnetic Field Profile ◽  
The Magnetic Field

ABSTRACTThe magnetic field profile of an electron cyclotron resonance (ECR) microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. Films of a-Si:H were deposited at pressures of 0.7 mTorr and 5 mTorr with a H2/SiH4 ratio of approximately three. The mobility gap density of states ND, deposition rate and light to dark conductivity were determined for the a-Si:H films. This data was correlated to the magnetic field profile of the plasma, which was characterized by Langmuir probe measurements of the ion current density. By variation of the magnetic field profile ND could be altered by more than an order of magnitude, from 1×1016 to 1×1017 at 0.7 mTorr and 1×1016 to 5×1017 at 5 mTorr. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration.

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