Ion energy analysis for sputtering‐type electron‐cyclotron‐resonance microwave plasma

Morito Matsuoka; Ken'ichi Ono

doi:10.1063/1.342534

Ion energy analysis for sputtering‐type electron‐cyclotron‐resonance microwave plasma

Journal of Applied Physics ◽

10.1063/1.342534 ◽

1988 ◽

Vol 64 (10) ◽

pp. 5179-5182 ◽

Cited By ~ 14

Author(s):

Morito Matsuoka ◽

Ken'ichi Ono

Keyword(s):

Cyclotron Resonance ◽

Energy Analysis ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Ion Energy ◽

Resonance Microwave

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Energy Distribution Functions of Ions Impacted on a Negatively Biased Substrate in an Electron Cyclotron Resonance Microwave Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4393 ◽

1999 ◽

Vol 38 (Part 1, No. 7B) ◽

pp. 4393-4396 ◽

Cited By ~ 3

Author(s):

Yasunori Ohtsu ◽

Keiichi Mori ◽

Hiroharu Fujita

Keyword(s):

Energy Distribution ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Distribution Functions ◽

Electron Cyclotron ◽

Energy Distribution Functions ◽

Resonance Microwave

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Determining the number of chemical steps responsible, for the distribution of molecular species within an electron cyclotron resonance-microwave plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580699 ◽

1997 ◽

Vol 15 (3) ◽

pp. 647-653 ◽

Cited By ~ 6

Author(s):

S. F. Webb ◽

G. A. Gaddy ◽

Rik Blumenthal

Keyword(s):

Molecular Species ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Resonance Microwave

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Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxial growth of GaN/GaAs‐based heterostructures

Applied Physics Letters ◽

10.1063/1.115682 ◽

1996 ◽

Vol 68 (11) ◽

pp. 1510-1512 ◽

Cited By ~ 20

Author(s):

Z. Z. Bandić ◽

R. J. Hauenstein ◽

M. L. O’Steen ◽

T. C. McGill

Keyword(s):

Epitaxial Growth ◽

Kinetic Modeling ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Resonance Microwave

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New high‐rate sputtering‐type electron cyclotron resonance microwave plasma using an electric mirror

Applied Physics Letters ◽

10.1063/1.101310 ◽

1989 ◽

Vol 54 (17) ◽

pp. 1645-1647 ◽

Cited By ~ 13

Author(s):

Morito Matsuoka ◽

Ken’ichi Ono

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

High Rate ◽

Resonance Microwave

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Electron-Cyclotron-Resonance Microwave Plasma Oxidation of Er1Ba2Cu3OySuperconductive Ceramics

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.l411 ◽

1988 ◽

Vol 27 (Part 2, No. 3) ◽

pp. L411-L413 ◽

Cited By ~ 5

Author(s):

Shoichiro Minomo ◽

Michio Taniguchi ◽

Yuji Ishida ◽

Masato Sugiyo ◽

Tetsuro Takahashi ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Resonance Microwave

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Poly‐Si etching using electron cyclotron resonance microwave plasma sources with multipole confinement

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578242 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1295-1302 ◽

Cited By ~ 4

Author(s):

S. M. Gorbatkin ◽

L. A. Berry ◽

John Swyers

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Plasma Sources ◽

Resonance Microwave

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Low temperature deposition of SiN[sub x]:H using SiH[sub 4]–N[sub 2] or SiH[sub 4]–NH[sub 3] distributed electron cyclotron resonance microwave plasma

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589579 ◽

1997 ◽

Vol 15 (6) ◽

pp. 1919 ◽

Cited By ~ 12

Author(s):

F. Delmotte

Keyword(s):

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Microwave

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Electron cyclotron resonance microwave plasma neutralizer for ion thruster systems

The 31st IEEE International Conference on Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. ◽

10.1109/plasma.2004.1339869 ◽

2004 ◽

Author(s):

Y. Hidaka ◽

R.M. Gilgenbach ◽

M.C. Jones ◽

Y.Y. Lau ◽

W.D. Getty

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Ion Thruster ◽

Resonance Microwave

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Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma

Philosophical Magazine B ◽

10.1080/014186399257573 ◽

1999 ◽

Vol 79 (1) ◽

pp. 137-148

Author(s):

Y. C. Liu, K. Furukawa, H. Nakashima,

Keyword(s):

Amorphous Silicon ◽

Cyclotron Resonance ◽

Room Temperature ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Electron Cyclotron ◽

Structural Studies ◽

Resonance Microwave

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Formation of silicon nitride layers by nitrogen ion irradiation of silicon biased to a high voltage in an electron cyclotron resonance microwave plasma

Applied Physics Letters ◽

10.1063/1.121001 ◽

1998 ◽

Vol 72 (10) ◽

pp. 1164-1166 ◽

Cited By ~ 8

Author(s):

W. Ensinger ◽

K. Volz ◽

G. Schrag ◽

B. Stritzker ◽

B. Rauschenbach

Keyword(s):

Silicon Nitride ◽

High Voltage ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Microwave Plasma ◽

Ion Irradiation ◽

Electron Cyclotron ◽

Nitrogen Ion ◽

Nitride Layers ◽

Resonance Microwave

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