Surface analysis of palladium boride liquid metal ion beam deposition on silicon single‐crystal solid surface

1987 ◽  
Vol 5 (4) ◽  
pp. 1362-1366
Author(s):  
R. H. Higuchi‐Rusli ◽  
J. C. Corelli ◽  
A. J. Steckl ◽  
H.‐S. Jin
Keyword(s):  
Liquid Metal ◽  
Single Crystal ◽  
Surface Analysis ◽  
Solid Surface ◽  
Metal Ion ◽  
Ion Beam ◽  
Silicon Single Crystal ◽  
Ion Beam Deposition ◽  
Beam Deposition

Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt58B42) liquid‐metal ion source

1988 ◽  
Vol 63 (3) ◽  
pp. 878-886 ◽  
Author(s):  
R. H. Higuchi‐Rusli ◽  
J. C. Corelli ◽  
A. J. Steckl ◽  
H‐S. Jin
Keyword(s):  
Liquid Metal ◽  
Surface Analysis ◽  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Deposition ◽  
Beam Deposition

Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition

2001 ◽  
Vol 697 ◽  
Author(s):  
Kie Moon Song ◽  
Namwoong Paik ◽  
Steven Kim ◽  
Daeil Kim ◽  
Seongjin Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Metal Ion ◽  
Nitrogen Doping ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Emission Data ◽  
Nitrogen Doped ◽  
Ion Beam Deposition ◽  
Beam Deposition

AbstractNitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.

Tem and X-Ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Single Crystal ◽  
Quartz Substrate ◽  
Ion Beam ◽  
Film Plane ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Amorphous Quartz ◽  
Beam Deposition

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.

Ion Beam Deposition

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 52-59 ◽  
Author(s):  
B.R. Appleton ◽  
R.A. Zuhr ◽  
T.S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Nuclear Reactions ◽  
Ion Beam ◽  
Isotope Separation ◽  
National Laboratory ◽  
New Physics ◽  
Structured Materials ◽  
Oak Ridge ◽  
Ion Beam Deposition ◽  
Beam Deposition

Ion beam processing of materials has a tradition at Oak Ridge National Laboratory that is as old as the laboratory itself. Consequently, when we began looking for a competitive way to participate in the excitement and new physics beginning to emerge from the fabrication and study of artificially structured materials, it was natural to look for a growth technique that incorporated ion beam processing. Our division, the Solid State Division, has a variety of ion implantation and ion beam analysis accelerators which are integrated with pulsed-laser sources into ultrahigh vacuum (UHV) surface analysis and processing chambers. These facilities allow us to do ion beam and laser processing of materials in UHV at temperatures from liquid helium to several hundred degrees centigrade and to study these alterations in situ by a variety of ion beam (ion scattering, ion channeling, nuclear reactions, etc.) and surface analysis (low energy electron diffraction, Auger, etc.) techniques. Since isotope separation has been done continually at ORNL for almost 45 years, the idea and advantages for altering this technique to do materials fabrication in UHV were immediately obvious. In the following article we will briefly review the history of the ion beam deposition (IBD) concept, describe our preliminary apparatus, and point out the inherent advantages of IBD for fabricating and studying artificially structured materials. Recent results obtained by IBD will be presented.

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