Summary Abstract: Transmission electron microscopy studies of the microstructure of AuNiGe ohmic contact to n‐type GaAs

1987 ◽  
Vol 5 (4) ◽  
pp. 1485-1486
Author(s):  
Yih‐Cheng Shih ◽  
E. L. Wilkie ◽  
Masanori Murakami
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contact ◽  
Transmission Electron

Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

1992 ◽  
Vol 281 ◽  
Author(s):  
W. Y. Han ◽  
H. S. Lee ◽  
Y. Lu ◽  
M. W. Cole ◽  
L. M. Casas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contact ◽  
Auger Electron ◽  
Specific Contact Resistance ◽  
Thermally Stable ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Specific Contact ◽  
Electron Spectrometry

ABSTRACTA thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contacts were thermally stable at 300 °C for 20 hours, and it appeared that the p-contacts were more stable than the n-contacts.

Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
X. W. Lin ◽  
J. Watté ◽  
K. Wuyts ◽  
W. Swider ◽  
R.E. Silverans ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Reaction Products ◽  
Transmission Electron ◽  
Major Reaction ◽  
Ohmic Contact Formation

ABSTRACTThe structural evolution of Ni/Au/Te/Au contacts on n-GaAs (001) was examined, in correlation with their electrical properties as a function of rapid thermal annealing in the temperature range 350 - 600°C. It was found that heating at temperatures ≥ 550°C results in the formation of ohmic contacts, while contacts annealed at lower temperatures remain nonohmic. Transmission electron microscopy revealed that heating ≥ 450°C leads to extensive reactions between Ni/Au/Te/Au and GaAs and deep spike formation into the GaAs. The major reaction products were identified as NiAs and β-AuGa. Ga2Te3 grains, growing epitaxially on GaAs, were detected only in 550°C annealed samples. Heating to 600°C caused considerable Ga2Te3 loss. Implications of these results concerning the ohmic contact formation mechanism are discussed.

In-Situ Annealing Transmission Electron Microscopy Study of Pd/Ge/Pd/GaAs Interfacial Reactions

1999 ◽  
Vol 589 ◽  
Author(s):  
F. Radulescu ◽  
J.M. Mccarthy ◽  
E. A. Stach
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Epitaxial Growth ◽  
Ohmic Contact ◽  
Ion Beam ◽  
Solid State Reactions ◽  
Cross Sectional ◽  
Transmission Electron

AbstractIn-situ TEM annealing experiments on the Pd (20 nm) / a-Ge (150 nm) / Pd (50 nm) GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. As-deposited cross-sectional samples of equal thickness were prepared using a focused ion beam (FIB) method and then subjected to in-situ annealing at temperatures between 130-400 °C. Excluding Pd-GaAs interactions, four sequential solid state reactions were observed during annealing of the Pd:Ge thin films. First, interdiffusion of the Pd and Ge layers occurred, followed by formation of the hexagonal Pd2Ge phase. This hexagonal phase then transformed into orthorhombic PdGe, followed by solid state epitaxial growth of Ge at the contact / GaAs interface. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape observations. These data agreed with a previous study that measured the activation energies through a differential scanning calorimetry (DSC) method. We established that the Ge transport to the GaAs interface was dependent upon the grain size of the PdGe phase. The nucleation and growth of this phase was demonstrated to have a significant effect on the solid phase epitaxial growth of Ge on GaAs. These findings allowed us to engineer an improved two step annealing procedure that would control the shape and size of the PdGe grains. Based on these results, we have established the suitability of combining FIB sample preparation with in-situ cross-sectional transmission electron microscopy (TEM) annealing for studying thin film solid-state reactions.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Direct Observation of Heat Exchanger Deposits by Cross Sectioning

1967 ◽  
Vol 25 ◽  
pp. 364-365
Author(s):  
R. W. Anderson ◽  
D. L. Senecal
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Heat Exchanger ◽  
Direct Observation ◽  
Cross Sections ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Flowing Water ◽  
Transmission Electron ◽  
Deposit Layer

A problem was presented to observe the packing densities of deposits of sub-micron corrosion product particles. The deposits were 5-100 mils thick and had formed on the inside surfaces of 3/8 inch diameter Zircaloy-2 heat exchanger tubes. The particles were iron oxides deposited from flowing water and consequently were only weakly bonded. Particular care was required during handling to preserve the original formations of the deposits. The specimen preparation method described below allowed direct observation of cross sections of the deposit layers by transmission electron microscopy.The specimens were short sections of the tubes (about 3 inches long) that were carefully cut from the systems. The insides of the tube sections were first coated with a thin layer of a fluid epoxy resin by dipping. This coating served to impregnate the deposit layer as well as to protect the layer if subsequent handling were required.

Phase Transformations in Ti-7w/oMo-3w/oMe Alloy

1974 ◽  
Vol 32 ◽  
pp. 514-515
Author(s):  
S. Fujishiro
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Tensile Strength ◽  
Mechanical Processing ◽  
Ray Method ◽  
X Ray ◽  
Transmission Electron ◽  
Water Quench ◽  
Alpha Beta

The mechanical properties of three titanium alloys (Ti-7Mo-3Al, Ti-7Mo- 3Cu and Ti-7Mo-3Ta) were evaluated as function of: 1) Solutionizing in the beta field and aging, 2) Thermal Mechanical Processing in the beta field and aging, 3) Solutionizing in the alpha + beta field and aging. The samples were isothermally aged in the temperature range 300° to 700*C for 4 to 24 hours, followed by a water quench. Transmission electron microscopy and X-ray method were used to identify the phase formed. All three alloys solutionized at 1050°C (beta field) transformed to martensitic alpha (alpha prime) upon being water quenched. Despite this heavily strained alpha prime, which is characterized by microtwins the tensile strength of the as-quenched alloys is relatively low and the elongation is as high as 30%.

Two- or three-way observations of the identical cell elements within the same sections by LM, TEM and/or SEM

1978 ◽  
Vol 36 (2) ◽  
pp. 82-83 ◽  
Author(s):  
Nakazo Watari ◽  
Yasuaki Hotta ◽  
Yoshio Mabuchi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Fine Structure ◽  
Light Microscopy ◽  
Thin Sections ◽  
Transmission Electron ◽  
Identical Cell ◽  
Electron Microscopes ◽  
Scanning Electron

It is very useful if we can observe the identical cell elements within the same sections by light microscopy (LM), transmission electron microscopy (TEM) and/or scanning electron microscopy (SEM) sequentially, because, the cell fine structure can not be indicated by LM, while the color is; on the other hand, the cell fine structure can be very easily observed by EM, although its color properties may not. However, there is one problem in that LM requires thick sections of over 1 μm, while EM needs very thin sections of under 100 nm. Recently, we have developed a new method to observe the same cell elements within the same plastic sections using both light and transmission (conventional or high-voltage) electron microscopes.In this paper, we have developed two new observation methods for the identical cell elements within the same sections, both plastic-embedded and paraffin-embedded, using light microscopy, transmission electron microscopy and/or scanning electron microscopy (Fig. 1).

Comparative Microstructures of Ion Milled and Electrochemically Thinned Composite Materials

1974 ◽  
Vol 32 ◽  
pp. 546-547
Author(s):  
R.R. Russell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Composite Materials ◽  
Great Difficulty ◽  
Ion Milling ◽  
Transmission Electron ◽  
Ion Damage ◽  
Intermetallic Composite

Transmission electron microscopy of metallic/intermetallic composite materials is most challenging since the microscopist typically has great difficulty preparing specimens with uniform electron thin areas in adjacent phases. The application of ion milling for thinning foils from such materials has been quite effective. Although composite specimens prepared by ion milling have yielded much microstructural information, this technique has some inherent drawbacks such as the possible generation of ion damage near sample surfaces.

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