Characteristics of radio frequency silicon carbide films

A. Raveh; A. Inspektor; U. Carmi; R. Avni

doi:10.1116/1.574317

Characteristics of radio frequency silicon carbide films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574317 ◽

1987 ◽

Vol 5 (5) ◽

pp. 2836-2841 ◽

Cited By ~ 17

Author(s):

A. Raveh ◽

A. Inspektor ◽

U. Carmi ◽

R. Avni

Keyword(s):

Silicon Carbide ◽

Radio Frequency

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Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.367299 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4968-4973 ◽

Cited By ~ 110

Author(s):

W. K. Choi ◽

T. Y. Ong ◽

L. S. Tan ◽

F. C. Loh ◽

K. L. Tan

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Photoelectron Spectroscopy ◽

Amorphous Silicon Carbide ◽

X Ray ◽

Spectroscopy Studies

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Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Journal of Applied Physics ◽

10.1063/1.1367398 ◽

2001 ◽

Vol 89 (11) ◽

pp. 6153-6158 ◽

Cited By ~ 15

Author(s):

J. Cui ◽

Rusli ◽

S. F. Yoon ◽

E. J. Teo ◽

M. B. Yu ◽

...

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Structural Properties ◽

Bias Voltage ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Silicon carbide nanoparticles for advanced materials produced in radio frequency modulated glow discharges

Vacuum ◽

10.1016/s0042-207x(97)00055-9 ◽

1997 ◽

Vol 48 (7-9) ◽

pp. 665-668 ◽

Cited By ~ 6

Author(s):

G Viera ◽

SN Sharma ◽

J Costa ◽

RQ Zhang ◽

JL Andújar ◽

...

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Advanced Materials ◽

Silicon Carbide Nanoparticles ◽

Glow Discharges

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An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering

Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy ◽

10.1016/j.saa.2014.10.029 ◽

2015 ◽

Vol 136 ◽

pp. 1409-1417 ◽

Cited By ~ 8

Author(s):

Mohsen Daouahi ◽

Mourad Omri ◽

Abdul Ghani Yousseph Kerm ◽

Faisal Abdulaziz Al-Agel ◽

Najeh Rekik

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Partial Pressure ◽

Nanocrystalline Structure ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

High Partial Pressure

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Morphology and growth mechanism of amorphous silicon carbide sputtered on anodic aluminum template by radio frequency magnetron sputtering

Ceramics International ◽

10.1016/j.ceramint.2020.04.166 ◽

2020 ◽

Vol 46 (11) ◽

pp. 19629-19633

Author(s):

Dayin Xu ◽

Congmian Zhen ◽

Hao Zhao

Keyword(s):

Silicon Carbide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Amorphous Silicon ◽

Growth Mechanism ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Amorphous Silicon Carbide ◽

Anodic Aluminum

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Noise characteristics of radio frequency sputtered amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.368798 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5057-5059 ◽

Cited By ~ 2

Author(s):

W. K. Choi ◽

L. J. Han ◽

L. G. Chua

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Noise Characteristics

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Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

Diamond and Related Materials ◽

10.1016/j.diamond.2016.03.006 ◽

2016 ◽

Vol 66 ◽

pp. 1-9 ◽

Cited By ~ 3

Author(s):

Haruhiko Ito ◽

Takeshi Ogaki ◽

Motoki Kumakura ◽

Shunsuke Saeki ◽

Tsuneo Suzuki ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Radio Frequency ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Structure ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide

Applied Physics Letters ◽

10.1063/1.5108913 ◽

2019 ◽

Vol 115 (4) ◽

pp. 043105 ◽

Cited By ~ 1

Author(s):

Gary Wolfowicz ◽

Christopher P. Anderson ◽

Samuel J. Whiteley ◽

David D. Awschalom

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Electric Fields ◽

Point Defects ◽

Heterodyne Detection ◽

Radio Frequency Electric Fields

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Radio frequency bias power effect on surface roughness of silicon carbide plasma etching

Applied Surface Science ◽

10.1016/s0169-4332(03)00567-1 ◽

2003 ◽

Vol 217 (1-4) ◽

pp. 261-267 ◽

Cited By ~ 13

Author(s):

Byungwhan Kim ◽

Kunho Kim ◽

Byung Teak Lee

Keyword(s):

Surface Roughness ◽

Silicon Carbide ◽

Radio Frequency ◽

Plasma Etching ◽

Bias Power ◽

Power Effect

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Effects of thermal and laser annealing on silicon carbide nanopowder produced in radio frequency glow discharge

Diamond and Related Materials ◽

10.1016/s0925-9635(97)00057-5 ◽

1997 ◽

Vol 6 (10) ◽

pp. 1559-1563 ◽

Cited By ~ 8

Author(s):

G. Viera ◽

S.N. Sharma ◽

J. Costa ◽

R.Q. Zhang ◽

J.L. Andújar ◽

...

Keyword(s):

Silicon Carbide ◽

Glow Discharge ◽

Radio Frequency ◽

Laser Annealing ◽

Radio Frequency Glow Discharge

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