Noise characteristics of radio frequency sputtered amorphous silicon carbide films

W. K. Choi; L. J. Han; L. G. Chua

doi:10.1063/1.368798

Noise characteristics of radio frequency sputtered amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.368798 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5057-5059 ◽

Cited By ~ 2

Author(s):

W. K. Choi ◽

L. J. Han ◽

L. G. Chua

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Noise Characteristics

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Infrared and x-ray photoelectron spectroscopy studies of as-prepared and furnace-annealed radio-frequency sputtered amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.367299 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4968-4973 ◽

Cited By ~ 110

Author(s):

W. K. Choi ◽

T. Y. Ong ◽

L. S. Tan ◽

F. C. Loh ◽

K. L. Tan

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Photoelectron Spectroscopy ◽

Amorphous Silicon Carbide ◽

X Ray ◽

Spectroscopy Studies

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Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Journal of Applied Physics ◽

10.1063/1.1367398 ◽

2001 ◽

Vol 89 (11) ◽

pp. 6153-6158 ◽

Cited By ~ 15

Author(s):

J. Cui ◽

Rusli ◽

S. F. Yoon ◽

E. J. Teo ◽

M. B. Yu ◽

...

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Structural Properties ◽

Bias Voltage ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Morphology and growth mechanism of amorphous silicon carbide sputtered on anodic aluminum template by radio frequency magnetron sputtering

Ceramics International ◽

10.1016/j.ceramint.2020.04.166 ◽

2020 ◽

Vol 46 (11) ◽

pp. 19629-19633

Author(s):

Dayin Xu ◽

Congmian Zhen ◽

Hao Zhao

Keyword(s):

Silicon Carbide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Amorphous Silicon ◽

Growth Mechanism ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Amorphous Silicon Carbide ◽

Anodic Aluminum

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Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

Diamond and Related Materials ◽

10.1016/j.diamond.2016.03.006 ◽

2016 ◽

Vol 66 ◽

pp. 1-9 ◽

Cited By ~ 3

Author(s):

Haruhiko Ito ◽

Takeshi Ogaki ◽

Motoki Kumakura ◽

Shunsuke Saeki ◽

Tsuneo Suzuki ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Radio Frequency ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Structure ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.360377 ◽

1995 ◽

Vol 78 (12) ◽

pp. 7289-7294 ◽

Cited By ~ 34

Author(s):

W. K. Choi ◽

F. L. Loo ◽

C. H. Ling ◽

F. C. Loh ◽

K. L. Tan

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Electrical Studies ◽

Hydrogenated Amorphous

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Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films

Journal of Applied Physics ◽

10.1063/1.363845 ◽

1997 ◽

Vol 81 (1) ◽

pp. 276-280 ◽

Cited By ~ 20

Author(s):

W. K. Choi ◽

L. J. Han ◽

F. L. Loo

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Electrical Characterization ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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The influence of radio frequency power on the characteristics of carbon-rich hydrogenated amorphous silicon carbide films

Journal of Physics Conference Series ◽

10.1088/1742-6596/276/1/012156 ◽

2011 ◽

Vol 276 ◽

pp. 012156

Author(s):

Juncao Bian ◽

Zhe Li ◽

Haiyan He ◽

Xiwen Zhang ◽

Jiang Lin ◽

...

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Radio Frequency Power ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous ◽

Frequency Power

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Structural relaxation of amorphous silicon carbide thin films in thermal annealing

Thin Solid Films ◽

10.1016/j.tsf.2007.06.194 ◽

2008 ◽

Vol 516 (12) ◽

pp. 3855-3861 ◽

Cited By ~ 12

Author(s):

Kun Xue ◽

Li-Sha Niu ◽

Hui-Ji Shi ◽

Jiwen Liu

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Structural Relaxation ◽

Amorphous Silicon Carbide

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Characterization of hydrogenated amorphous silicon carbide films

10.1117/12.57018 ◽

1992 ◽

Author(s):

S. Uthanna

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Silicon Carbide ◽

Hydrogenated Amorphous

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Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

AIP Advances ◽

10.1063/1.4952592 ◽

2016 ◽

Vol 6 (5) ◽

pp. 055021 ◽

Cited By ~ 2

Author(s):

Tatsuya Murakami ◽

Takashi Masuda ◽

Satoshi Inoue ◽

Hiroshi Yano ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Photoemission Spectroscopy ◽

Amorphous Silicon Carbide ◽

Inverse Photoemission ◽

P Type ◽

Inverse Photoemission Spectroscopy

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