Bonding and stability in narrow‐gap ternary semiconductors for infrared applications

1986 ◽  
Vol 4 (4) ◽  
pp. 2010-2013 ◽  
Author(s):  
A. Wall ◽  
C. Caprile ◽  
A. Franciosi ◽  
M. Vaziri ◽  
R. Reifenberger ◽  
...  
Keyword(s):  
Narrow Gap ◽  
Ternary Semiconductors

Structural and Electronic Properties of Narrow Gap Zincblende and Chalcopyrite Compounds

1990 ◽  
Vol 193 ◽  
Author(s):  
T.M. de Pascale ◽  
F. Meloni ◽  
M. Serra ◽  
S. Massidda ◽  
A. Continenza ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Full Potential ◽  
Narrow Gap ◽  
Augmented Plane Wave ◽  
Bulk Semiconductors ◽  
Structural And Electronic Properties ◽  
Indium Compounds ◽  
Linearized Augmented Plane Wave ◽  
Ternary Semiconductors

ABSTRACTIndium compounds and corresponding epitaxially grown superlattices have provided good single crystals suitable for accurate experimental measurements and have added new interest to the study of the constituent bulk semiconductors and the II-IV-V2 chalcopyrite crystal phases. This paper reports results of structural and electronic properties of narrow gap binary and ternary semiconductors determined selfconsistently from first principles using both the full potential linearized augmented plane wave (FLAPW) and norm-conserving pseudopotentials (PP) total-energy methods.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Properties of Creeping Discharge in Narrow Gap between Dielectric Plates in PFAE Oil

2011 ◽  
Vol 131 (10) ◽  
pp. 817-823
Author(s):  
Takuro Usui ◽  
Ryoichi Hanaoka ◽  
Shinzo Takata ◽  
Yasunori Kanamaru ◽  
Hidenobu Koide ◽  
...  
Keyword(s):  
Narrow Gap ◽  
Creeping Discharge

MATHEMATICAL MODELING OF TEMPERATURE EFFECT ON THE FAN CHART OF MAGNETOABSORPTION SPECTRUM IN SEMICONDUCTORS

2019 ◽  
pp. 104-115
Author(s):  
G. Gulyamov ◽  
U. I. Erkaboev ◽  
A. G. Gulyamov
Keyword(s):  
Mathematical Modeling ◽  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Landau Levels ◽  
Joint Density ◽  
Narrow Gap ◽  
Narrow Gap Semiconductors ◽  
Dispersion Law ◽  
The Magnetic Field

The article considers the oscillations of interband magneto-optical absorption in semiconductors with the Kane dispersion law. We have compared the changes in oscillations of the joint density of states with respect to the photon energy for different Landau levels in parabolic and non-parabolic zones. An analytical expression is obtained for the oscillation of the combined density of states in narrow-gap semiconductors. We have calculated the dependence of the maximum photon energy on the magnetic field at different temperatures. A theoretical study of the band structure showed that the magnetoabsorption oscillations decrease with an increase in temperature, and the photon energies nonlinearly depend on a strong magnetic field. The article proposes a simple method for calculating the oscillation of joint density of states in a quantizing magnetic field with the non-quadratic dispersion law. The temperature dependence of the oscillations joint density of states in semiconductors with non-parabolic dispersion law is obtained. Moreover, the article studies the temperature dependence of the band gap in a strong magnetic field with the non-quadratic dispersion law. The method is applied to the research of the magnetic absorption in narrow-gap semiconductors with nonparabolic dispersion law. It is shown that as the temperature increases, Landau levels are washed away due to thermal broadening and density of states turns into a density of states without a magnetic field. Using the mathematical model, the temperature dependence of the density distribution of energy states in strong magnetic fields is considered. It is shown that the continuous spectrum of the density of states, measured at the temperature of liquid nitrogen, at low temperatures turns into discrete Landau levels. Mathematical modeling of processes using experimental values of the continuous spectrum of the density of states makes it possible to calculate discrete Landau levels. We have created the three-dimensional fan chart of magneto optical oscillations of semiconductors with considering for the joint density of energy states. For a nonquadratic dispersion law, the maximum frequency of the absorbed light and the width of the forbidden band are shown to depend nonlinearly on the magnetic field. Modeling the temperature  dependence allowed us to determine the Landau levels in semiconductors in a wide temperature spectrum. Using the proposed model, the experimental results obtained for narrow-gap semiconductors are analyzed. The theoretical results are compared with experimental results.

Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Thermoelectric Properties ◽  
Three Dimensional ◽  
Structure Type ◽  
Narrow Gap ◽  
Low Thermal Conductivity ◽  
Seebeck Coefficients ◽  
Metal Atoms ◽  
Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

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