ADMITTANCE CHARACTERISTICS OF NARROW GAP Hg1-xCdxTe n-p-n AND p-n-p TRIPLE LAYER STRUCTURES

Wrinkles are widely found in natural and engineering structures, ranging from skins to stretchable electronics. However, it is nontrivial to predict wrinkles, especially for complicated structures, such as multilayer or gradient structures. Here, we establish a symplectic analysis framework for the wrinkles and apply it to layered neo-Hookean structures. The symplectic structure enables us to accurately and efficiently solve the eigenvalue problems of wrinkles via the extended Wittrick–Williams (w–W) algorithm. The symplectic analysis is able to exactly predict wrinkles in bi- and triple-layer structures, compared with the benchmark results and finite element simulations. Our findings also shed light on the formation of hierarchical wrinkles

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Characterization of GaGdN/AlGaN/GaGdN Triple-layer Structures with High Gd Concentration for Tunneling Magnetoresistance Devices

10.7567/ssdm.2011.p-8-15 ◽

2011 ◽

Author(s):

K. Higashi ◽

D. Abe ◽

Y. Mitsuno ◽

S. Komori ◽

S. Sano ◽

...

Keyword(s):

Tunneling Magnetoresistance ◽

Triple Layer ◽

Layer Structures

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Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

RSC Advances ◽

10.1039/c7ra13550e ◽

2018 ◽

Vol 8 (22) ◽

pp. 11862-11870 ◽

Cited By ~ 20

Author(s):

Chia-Ching Wu

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Layer Structure ◽

Touch Screen ◽

Triple Layer ◽

Layer Structures

A flexible and transparent amorphous-indium tin oxide/silver/crystalline-indium tin oxide (a-ITO/Ag/c-ITO) triple-layer structure was prepared as an electrode for capacitive-type touch screen panels (TSPs).

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Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures

Journal of Physics Conference Series ◽

10.1088/1742-6596/253/1/012055 ◽

2010 ◽

Vol 253 ◽

pp. 012055

Author(s):

B Pantchev ◽

P Danesh ◽

B Schmidt ◽

D Grambole ◽

L Bischoff

Keyword(s):

Ion Beam ◽

Triple Layer ◽

Layer Structures

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Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114104 ◽

1975 ◽

Vol 33 ◽

pp. 96-97

Author(s):

R. W. Ditchfield ◽

A. G. Cullis

Keyword(s):

Epitaxial Growth ◽

Electron Energy ◽

Silicon Substrates ◽

Secondary Phases ◽

Si Substrates ◽

Transmission Electron ◽

Layer Structures ◽

Si Films ◽

Electron Energy Loss ◽

Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Computer programs for the calculation of x-ray intensities emitted by elements in multi-layer structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134685 ◽

1990 ◽

Vol 48 (2) ◽

pp. 216-217

Author(s):

G.F. Bastin ◽

H.J.M. Heijligers ◽

J.M. Dijkstra

Keyword(s):

Software Package ◽

Light Element ◽

Matrix Correction ◽

Excellent Performance ◽

Element Analysis ◽

X Ray ◽

Know How ◽

Accurate Knowledge ◽

Layer Structures ◽

Bulk Matrix

For the calculation of X-ray intensities emitted by elements present in multi-layer systems it is vital to have an accurate knowledge of the x-ray ionization vs. mass-depth (ϕ(ρz)) curves as a function of accelerating voltage and atomic number of films and substrate. Once this knowledge is available the way is open to the analysis of thin films in which both the thicknesses as well as the compositions can usually be determined simultaneously.Our bulk matrix correction “PROZA” with its proven excellent performance for a wide variety of applications (e.g., ultra-light element analysis, extremes in accelerating voltage) has been used as the basis for the development of the software package discussed here. The PROZA program is based on our own modifications of the surface-centred Gaussian ϕ(ρz) model, originally introduced by Packwood and Brown. For its extension towards thin film applications it is required to know how the 4 Gaussian parameters α, β, γ and ϕ(o) for each element in each of the films are affected by the film thickness and the presence of other layers and the substrate.

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Intergrowth of modulated structures in high Tc Bi-Sr-Ca-Cu-O superconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173510 ◽

1990 ◽

Vol 48 (4) ◽

pp. 76-77

Author(s):

A.Q. He ◽

G.W. Qiao ◽

J. Zhu ◽

H.Q. Ye

Keyword(s):

Twin Structure ◽

Modulated Structure ◽

High Tc ◽

One Dimensional ◽

Lattice Constants ◽

Superconducting Phases ◽

Modulated Structures ◽

Layer Structures

Since the first discovery of high Tc Bi-Sr-Ca-Cu-O superconductor by Maeda et al, many EM works have been done on it. The results show that the superconducting phases have a type of ordered layer structures similar to that in Y-Ba-Cu-O system formulated in Bi2Sr2Can−1CunO2n+4 (n=1,2,3) (simply called 22(n-1) phase) with lattice constants of a=0.358, b=0.382nm but the length of c being different according to the different value of n in the formulate. Unlike the twin structure observed in the Y-Ba-Cu-O system, there is an incommensurate modulated structure in the superconducting phases of Bi system superconductors. Modulated wavelengths of both 1.3 and 2.7 nm have been observed in the 2212 phase. This communication mainly presents the intergrowth of these two kinds of one-dimensional modulated structures in 2212 phase.

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