Stress measurements on multilevel thin film dielectric layers used in Si integrated circuits

1986 ◽  
Vol 4 (3) ◽  
pp. 645-649 ◽  
Author(s):  
Y. S. Chen ◽  
Homi Fatemi
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Stress Measurements ◽  
Dielectric Layers ◽  
Film Dielectric

Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides

2011 ◽  
Author(s):  
S. J. Pearce ◽  
M. D. B. Charlton ◽  
G. J. Parker ◽  
J. S. Wilkinson
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Dielectric Layers ◽  
Film Dielectric ◽  
Rare Earth Doped

Polyimide Nanofoams For Low Dielectric Applications

1995 ◽  
Vol 381 ◽  
Author(s):  
K. R. Carter ◽  
H. J. Cha ◽  
R. A. Dipietro ◽  
C. J. Hawker ◽  
J. L. Hedrick ◽  
...  
Keyword(s):  
Thin Film ◽  
High Thermal Stability ◽  
Dielectric Constants ◽  
Dispersed Phase ◽  
Foam Formation ◽  
Density Measurements ◽  
Low Dielectric ◽  
Microelectronic Devices ◽  
Dielectric Layers ◽  
Film Dielectric

AbstractFoamed polyimides have been developed in order to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices. In these systems the pore sizes are in the nanometer range, thus, the term “nanofoam”. The polyimide foams are prepared from block copolymers consisting of thermally stable and thermally labile blocks, the latter being the dispersed phase. Foam formation is effected by thermolysis of the thermally labile block leaving pores the size and shape corresponding to the initial copolymer morphology. Nanofoams prepared from a number of polyimides as matrix materials, were investigated as well as a number of thermally labile polymers. The foams were characterized by a variety of experiments including, TEM, SAXS, WAXD, DMTA, density measurements, refractive index measurements and dielectric constant measurements. Thin film foams, with high thermal stability and dielectric constants approaching 2.0, can be prepared using the copolymer/nanofoam approach.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Thin film wavelength converters for photonic integrated circuits

Optica ◽  
2016 ◽  
Vol 3 (5) ◽  
pp. 531 ◽  
Author(s):  
Lin Chang ◽  
Yifei Li ◽  
Nicolas Volet ◽  
Leiran Wang ◽  
Jon Peters ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Wavelength Converters

scholarly journals Gigahertz Phononic Integrated Circuits on Thin-Film Lithium Niobate on Sapphire

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Felix M. Mayor ◽  
Wentao Jiang ◽  
Christopher J. Sarabalis ◽  
Timothy P. McKenna ◽  
Jeremy D. Witmer ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
Integrated Circuits

scholarly journals Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽  
2017 ◽  
Vol 7 (62) ◽  
pp. 39147-39152 ◽  
Author(s):  
K. N. Woods ◽  
E. C. Waddington ◽  
C. A. Crump ◽  
E. A. Bryan ◽  
T. S. Gleckler ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Oxide Thin Film ◽  
Solution Route ◽  
Thin Film Dielectrics ◽  
Film Dielectric ◽  
Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

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