Metal‐derived band gap states: Ti on GaAs(110)

1986 ◽  
Vol 4 (3) ◽  
pp. 874-878 ◽  
Author(s):  
R. Ludeke ◽  
D. Straub ◽  
F. J. Himpsel ◽  
G. Landgren
Keyword(s):  
Band Gap ◽  
Gap States

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 ◽  
Vol 56 (26) ◽  
pp. 2846-2849 ◽  
Author(s):  
R. Haight ◽  
J. Bokor
Keyword(s):  
Band Gap ◽  
Direct Observation ◽  
Gap States

Band gap states of V and Cr in 6H-silicon carbide

1997 ◽  
Vol 65 (3) ◽  
pp. 329-331 ◽  
Author(s):  
N. Achtziger ◽  
J. Grillenberger ◽  
W. Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Effects of oxidation on surface band-gap states ina-Si:H

1988 ◽  
Vol 37 (14) ◽  
pp. 8363-8369 ◽  
Author(s):  
K. Winer ◽  
L. Ley
Keyword(s):  
Band Gap ◽  
Surface Band ◽  
Gap States

scholarly journals Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jun Young Choi ◽  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Sung Woo Hwang ◽  
Sangsig Kim ◽  
...  
Keyword(s):  
Band Gap ◽  
Doping Concentration ◽  
Si Doping ◽  
Gap States

scholarly journals Effect of on-site Coulomb repulsion termUon the band-gap states of the reduced rutile (110)TiO2surface

2008 ◽  
Vol 77 (4) ◽  
Author(s):  
Carmen J. Calzado ◽  
Norge Cruz Hernández ◽  
Javier Fdez. Sanz
Keyword(s):  
Band Gap ◽  
Coulomb Repulsion ◽  
Gap States
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