scholarly journals Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Jun Young Choi ◽  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Sung Woo Hwang ◽  
Sangsig Kim ◽  
...  
Keyword(s):  
Band Gap ◽  
Doping Concentration ◽  
Si Doping ◽  
Gap States

Effect of Zn doping concentration on optical band gap of PbS thin films

2019 ◽  
Vol 792 ◽  
pp. 1000-1007 ◽  
Author(s):  
Mengting Liu ◽  
Qiuqiang Zhan ◽  
Wei Li ◽  
Rui Li ◽  
Qinyu He ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Zn Doping

THE EFFECT OF HIGH N-DOPED ANATASE TiO2 ON THE BAND GAP NARROWING AND REDSHIFT BY FIRST-PRINCIPLES

2012 ◽  
Vol 26 (27) ◽  
pp. 1250179 ◽  
Author(s):  
QINGYU HOU ◽  
YONGJUN JIN ◽  
CHUN YING ◽  
ERJUN ZHAO ◽  
YUE ZHANG ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Formation Energy ◽  
Doping Concentration ◽  
Covalent Bond ◽  
Anatase Tio2 ◽  
Structure Population ◽  
Densities Of States ◽  
N Doping ◽  
Band Gap Narrowing

Anatase TiO 2 supercells were studied by first-principles, in which one was undoped and another three were high N -doping. Partial densities of states, band structure, population and absorption spectrum were calculated. The calculated results indicated that in the condition of TiO 2-x N x (x = 0.0625, 0.125, 0.25), the higher the doping concentration is, the shorter will be the lattice parameters parallel to the direction of c-axis. The strength of covalent bond significantly varied. The formation energy increases at first, and then decreases. The doping models become less stable as N -doping concentration increases. Meanwhile, the narrower the band gap is, the more significant will be the redshift, which is in agreement with the experimental results.

The origin and nature of silicon band‐gap states at the Si/SiO2interface

1981 ◽  
Vol 38 (11) ◽  
pp. 884-886 ◽  
Author(s):  
J. Singh ◽  
A. Madhukar
Keyword(s):  
Band Gap ◽  
Gap States

Direct Observation of Adsorbate-Induced Band-Gap States on GaAs(110)

1986 ◽  
Vol 56 (26) ◽  
pp. 2846-2849 ◽  
Author(s):  
R. Haight ◽  
J. Bokor
Keyword(s):  
Band Gap ◽  
Direct Observation ◽  
Gap States

scholarly journals Effect of Doping Concentration on the Optical Properties of Indium-Doped Gallium Arsenide Thin FILMS

2016 ◽  
Vol 40 (2) ◽  
pp. 179-186 ◽  
Author(s):  
Md Saiful Islam ◽  
Chitra Das ◽  
Mehnaz Sharmin ◽  
Kazi Md Amzad Hussain ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Doping Concentration ◽  
High Vacuum ◽  
Band Gap Energy ◽  
Crystal Thickness ◽  
Thermal Evaporation Method ◽  
Gap Energy ◽  
Indium Doping

Effects of indium doping (concentration 0.2, 0.3 and 0.4%) on the optical properties of GaAs thin films were studied. Thin films of 600 nm were grown onto chemically and ultrasonically cleaned glass substrate by thermal evaporation method in high vacuum (~10-4 Pa) at 50°C fixed substrate temperature. The samples were annealed for 15 minutes at a fixed temperature of 200°C. The thicknesses of films were being measured in situ by a quartz crystal thickness monitor during deposition. The transmittance and reflectance data were found using UV-VIS-NIR spectrophotometer in the photon wavelength range of 310 ~ 2500 nm. These data were utilized to compute the absorption coefficient, refractive index, extinction co-efficient and band gap energy of the studied films. Here transmittance was found 78 for 0.2% indium doping concentration. The band gap energy decreased with the increase of doping concentration.Journal of Bangladesh Academy of Sciences, Vol. 40, No. 2, 179-186, 2016

Band gap states of V and Cr in 6H-silicon carbide

1997 ◽  
Vol 65 (3) ◽  
pp. 329-331 ◽  
Author(s):  
N. Achtziger ◽  
J. Grillenberger ◽  
W. Witthuhn
Keyword(s):  
Silicon Carbide ◽  
Band Gap ◽  
Gap States

Effects of oxidation on surface band-gap states ina-Si:H

1988 ◽  
Vol 37 (14) ◽  
pp. 8363-8369 ◽  
Author(s):  
K. Winer ◽  
L. Ley
Keyword(s):  
Band Gap ◽  
Surface Band ◽  
Gap States
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