Summary Abstract: The surface core‐level shifts in synchrotron radiation photoemission spectra as a probe of semiconductor interface morphology

1985 ◽  
Vol 3 (3) ◽  
pp. 976-977
Author(s):  
R. R. Daniels ◽  
G. Margaritondo ◽  
F. Cerrina
Keyword(s):  
Synchrotron Radiation ◽  
Core Level ◽  
Interface Morphology ◽  
Semiconductor Interface ◽  
Level Shifts ◽  
Synchrotron Radiation Photoemission

scholarly journals Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2×1 Studied by High-Resolution Synchrotron Radiation Photoemission

2019 ◽  
Author(s):  
Yi-Ting Cheng ◽  
Hsien-Wen Wan ◽  
Chiu-Ping Cheng ◽  
Jueinai Kwo ◽  
Minghwei Hong ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Atomic Oxygen ◽  
Subsurface Layer ◽  
Core Level ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Level Shifts ◽  
Embryo Stage ◽  
A Charge ◽  
Synchrotron Radiation Photoemission

Embryo stage of oxidation of an epi Ge(001)-2×1 by atomic oxygen and molecular O2 is studied via synchrotron radiation photoemission. The topmost surface buckled with the up- and down-dimer atoms and the first subsurface layer behave distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O2 molecules become dissociated upon reaching the epi Ge(001)-2×1 surface. One of the O atom removes off the up-dimer atom, and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen adsorbed on the epi Ge(001)-2×1 preferentially in between the up-dimer atoms and the underneath subsurface atoms without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. Both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O2, a possible cause of low reliability in Ge-related metal-oxide-semiconductor (MOS) devices.

scholarly journals Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 554 ◽  
Author(s):  
Yi-Ting Cheng ◽  
Hsien-Wen Wan ◽  
Chiu-Ping Cheng ◽  
Jueinai Kwo ◽  
Minghwei Hong ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Atomic Oxygen ◽  
Subsurface Layer ◽  
Metal Oxide Semiconductor ◽  
Core Level ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Level Shifts ◽  
A Charge ◽  
Synchrotron Radiation Photoemission

In this paper, we investigate the embryonic stage of oxidation of an epi Ge(001)-2 × 1 by atomic oxygen and molecular O2 via synchrotron radiation photoemission. The topmost buckled surface with the up- and down-dimer atoms, and the first subsurface layer behaves distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O2 molecules become dissociated upon reaching the epi Ge(001)-2 × 1 surface. One of the O atoms removes the up-dimer atom and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen preferentially adsorbed on the epi Ge(001)-2 ×1 in between the up-dimer atoms and the underneath subsurface atoms, without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. They both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment that was originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O2, which might account for the low reliability in the Ge-related metal-oxide-semiconductor (MOS) devices.

HIGH RESOLUTION SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY

1997 ◽  
Vol 04 (02) ◽  
pp. 287-293 ◽  
Author(s):  
G. LE LAY
Keyword(s):  
Synchrotron Radiation ◽  
Surface Science ◽  
Core Level ◽  
Silicon Surfaces ◽  
Photoemission Spectroscopy ◽  
Level Shifts ◽  
Dimensional Electron Gas ◽  
Spectroscopy Studies ◽  
Synchrotron Radiation Photoemission ◽  
Very High

Photoemission spectroscopy studies with very-high-energetic resolution at third generation synchrotron radiation facilities open up new perspectives in surface science. To illustrate this, recent advances achieved from valence band studies will be described, i.e. investigation of the quantized electronic states of a two-dimensional electron gas at the InAs(110) surface. New insights gained from core level spectroscopy in the most promising soft X-ray regime will also be presented, i.e. evidence of new spectral features in Si 2p studies of low index silicon surfaces and identification of surface core level shifts in III–V semiconductors.

scholarly journals Synchrotron radiation photoemission studies of core level excitation effects

1979 ◽  
Vol 89 (1-3) ◽  
pp. 606-614 ◽  
Author(s):  
G.P. Williams ◽  
G.J. Lapeyre ◽  
J. Anderson ◽  
F. Cerrina ◽  
R.E. Dietz ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Core Level ◽  
Synchrotron Radiation Photoemission

Composition and Structure of β-SiC(100)-(2 × 2) Surfaces Monitored by Photoemission Spectroscopy using Synchrotron Radiation

1998 ◽  
Vol 05 (01) ◽  
pp. 213-217 ◽  
Author(s):  
L. Douillard ◽  
F. Semond ◽  
P. Soukiassian ◽  
D. Dunham ◽  
F. Amy ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Experimental Evidence ◽  
Valence Band ◽  
Surface Reconstruction ◽  
Core Level ◽  
Single Domain ◽  
Photoemission Spectroscopy ◽  
Spectral Features ◽  
Composition And Structure ◽  
Level Shifts

We investigate the single domain β-SiC(100)-(2 × 1) surface reconstruction by core level and valence band photoemission spectroscopies using synchrotron radiation. Specific spectral features at the Si 2p and C 1s core levels including bulk and surface core level shifts, and in the valence band, bring experimental evidence of reproducible β-SiC(100)-(2 × 1) structures having different Si/C compositions ranging from Si-terminated to Si- + C-containing surfaces.

THE ORGANIC LED SURFACE: A SYNCHROTRON RADIATION PHOTOEMISSION STUDY

2007 ◽  
Vol 14 (03) ◽  
pp. 377-385 ◽  
Author(s):  
TUN-WEN PI ◽  
T. C. YU
Keyword(s):  
Synchrotron Radiation ◽  
Binding Energy ◽  
Elevated Temperatures ◽  
Core Level ◽  
Pyridyl Ring ◽  
Dangling Bonds ◽  
Surface Electronic Structure ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission ◽  
Original Component

Tris(8-hydroxyquinolato) aluminum ( Alq 3), a prototypical molecule for organic light-emitting devices, has been studied via synchrotron radiation photoemission to investigate (1) the surface electronic structure of the molecules at room temperature and at elevated temperatures, (2) adsorption onto the inorganic Si (001)-2×1 surface, and (3) doping with the alkaline metal Mg . For case (1), three chemical environments of carbon are resolved. Moreover, the shake-up satellite structures are detected in all the N 1s, C 1s, O 1s, and Al 2p core-level spectra, but with different magnitudes. Annealing allows for a charge redistribution within Alq 3 itself. As to case (2), the organic molecules not only passivate the dangling bonds, but also rupture the dimer bonds. The wave function of the surface dangling bonds and of the pyridyl side of an 8-quinolinol ligand overlaps greatly so that charge is polarized towards, the organic adlayer. However, the polarization diminishes at greater coverage. With regard to case (3), the N 1s core-level spectra appear as an Mg -induced charge-transfer component with a binding energy lower than the original component. This new component grows gradually in intensity with increasing concentration of the dopant. Moreover, Mg also affects the O 1s core, as manifested by a component lying at a +1.09 eV higher binding energy than the original component. The Mg 2p core-level spectra, although rather broad, exhibit a shift toward a lower binding energy with increasing Mg vapor. Upon examining all these experimental results, we propose that Mg in the surface Alq 3 molecules forms clusters. Each cluster attaches to a pyridyl ring, affecting not only the nitrogen atom at that ring, but also the oxygen atom in the adjacent phenoxide ring. The depleted charge in the affected oxygen then flows about its adherent ligand and resides on the pyridyl ring at that ligand, resulting in a high Alq 3 anion state.

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY AT THE Cu/Ru(0001) INTERFACE

2002 ◽  
Vol 09 (02) ◽  
pp. 723-727 ◽  
Author(s):  
T. H. ANDERSEN ◽  
L. BECH ◽  
J. ONSGAARD ◽  
S. V. HOFFMANN ◽  
Z. LI
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Energy Shift ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Copper Adsorption ◽  
X Ray ◽  
Level Shifts ◽  
Binding Energy Shift

Copper adsorption on Ru(0001) has been studied by synchrotron radiation. The clean Ru 3d 5/2 spectra were found to consist of two components with a binding energy shift of 400 meV. The component with the lower binding energy represents the first layer of ruthenium atoms. Adsorption of copper gives rise to core level shifts of the Ru 3d 5/2 components, which were studied as a function of Cu coverage. Experiments were carried out with copper coverages varying from the submonolayer range up to two monolayers of copper. The binding energy of the Cu 2p 3/2 level was measured by X-ray photoemission spectroscopy.

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