Core-level shifts in ionic KCN multilayers: A synchrotron-radiation and Penning-spectroscopy study of K and CN on Pd(111) and Pd(100)

1989 ◽  
Vol 40 (5) ◽  
pp. 2801-2805
Author(s):  
R. Hemmen ◽  
M. E. Kordesch ◽  
H. Conrad
Keyword(s):  
Synchrotron Radiation ◽  
Core Level ◽  
Spectroscopy Study ◽  
Level Shifts

scholarly journals Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2×1 Studied by High-Resolution Synchrotron Radiation Photoemission

2019 ◽  
Author(s):  
Yi-Ting Cheng ◽  
Hsien-Wen Wan ◽  
Chiu-Ping Cheng ◽  
Jueinai Kwo ◽  
Minghwei Hong ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Atomic Oxygen ◽  
Subsurface Layer ◽  
Core Level ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Level Shifts ◽  
Embryo Stage ◽  
A Charge ◽  
Synchrotron Radiation Photoemission

Embryo stage of oxidation of an epi Ge(001)-2×1 by atomic oxygen and molecular O2 is studied via synchrotron radiation photoemission. The topmost surface buckled with the up- and down-dimer atoms and the first subsurface layer behave distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O2 molecules become dissociated upon reaching the epi Ge(001)-2×1 surface. One of the O atom removes off the up-dimer atom, and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen adsorbed on the epi Ge(001)-2×1 preferentially in between the up-dimer atoms and the underneath subsurface atoms without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. Both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O2, a possible cause of low reliability in Ge-related metal-oxide-semiconductor (MOS) devices.

scholarly journals Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 554 ◽  
Author(s):  
Yi-Ting Cheng ◽  
Hsien-Wen Wan ◽  
Chiu-Ping Cheng ◽  
Jueinai Kwo ◽  
Minghwei Hong ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Atomic Oxygen ◽  
Subsurface Layer ◽  
Metal Oxide Semiconductor ◽  
Core Level ◽  
Oxide Semiconductor ◽  
Mos Devices ◽  
Level Shifts ◽  
A Charge ◽  
Synchrotron Radiation Photoemission

In this paper, we investigate the embryonic stage of oxidation of an epi Ge(001)-2 × 1 by atomic oxygen and molecular O2 via synchrotron radiation photoemission. The topmost buckled surface with the up- and down-dimer atoms, and the first subsurface layer behaves distinctly from the bulk by exhibiting surface core-level shifts in the Ge 3d core-level spectrum. The O2 molecules become dissociated upon reaching the epi Ge(001)-2 × 1 surface. One of the O atoms removes the up-dimer atom and the other bonds with the underneath Ge atom in the subsurface layer. Atomic oxygen preferentially adsorbed on the epi Ge(001)-2 ×1 in between the up-dimer atoms and the underneath subsurface atoms, without affecting the down-dimer atoms. The electronic environment of the O-affiliated Ge up-dimer atoms becomes similar to that of the down-dimer atoms. They both exhibit an enrichment in charge, where the subsurface of the Ge layer is maintained in a charge-deficient state. The dipole moment that was originally generated in the buckled reconstruction no longer exists, thereby resulting in a decrease in the ionization potential. The down-dimer Ge atoms and the back-bonded subsurface atoms remain inert to atomic O and molecular O2, which might account for the low reliability in the Ge-related metal-oxide-semiconductor (MOS) devices.

Hard X‐ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces

2020 ◽  
Vol 52 (12) ◽  
pp. 933-938
Author(s):  
Oleksandr Romanyuk ◽  
Oliver Supplie ◽  
Agnieszka Paszuk ◽  
Jan Philipp Stoeckmann ◽  
Regan George Wilks ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Spectroscopy Study ◽  
X Ray ◽  
Level Shifts

Composition and Structure of β-SiC(100)-(2 × 2) Surfaces Monitored by Photoemission Spectroscopy using Synchrotron Radiation

1998 ◽  
Vol 05 (01) ◽  
pp. 213-217 ◽  
Author(s):  
L. Douillard ◽  
F. Semond ◽  
P. Soukiassian ◽  
D. Dunham ◽  
F. Amy ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Experimental Evidence ◽  
Valence Band ◽  
Surface Reconstruction ◽  
Core Level ◽  
Single Domain ◽  
Photoemission Spectroscopy ◽  
Spectral Features ◽  
Composition And Structure ◽  
Level Shifts

We investigate the single domain β-SiC(100)-(2 × 1) surface reconstruction by core level and valence band photoemission spectroscopies using synchrotron radiation. Specific spectral features at the Si 2p and C 1s core levels including bulk and surface core level shifts, and in the valence band, bring experimental evidence of reproducible β-SiC(100)-(2 × 1) structures having different Si/C compositions ranging from Si-terminated to Si- + C-containing surfaces.

HIGH RESOLUTION SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY

1997 ◽  
Vol 04 (02) ◽  
pp. 287-293 ◽  
Author(s):  
G. LE LAY
Keyword(s):  
Synchrotron Radiation ◽  
Surface Science ◽  
Core Level ◽  
Silicon Surfaces ◽  
Photoemission Spectroscopy ◽  
Level Shifts ◽  
Dimensional Electron Gas ◽  
Spectroscopy Studies ◽  
Synchrotron Radiation Photoemission ◽  
Very High

Photoemission spectroscopy studies with very-high-energetic resolution at third generation synchrotron radiation facilities open up new perspectives in surface science. To illustrate this, recent advances achieved from valence band studies will be described, i.e. investigation of the quantized electronic states of a two-dimensional electron gas at the InAs(110) surface. New insights gained from core level spectroscopy in the most promising soft X-ray regime will also be presented, i.e. evidence of new spectral features in Si 2p studies of low index silicon surfaces and identification of surface core level shifts in III–V semiconductors.

HIGH RESOLUTION CORE LEVEL SPECTROSCOPY AT THE Cu/Ru(0001) INTERFACE

2002 ◽  
Vol 09 (02) ◽  
pp. 723-727 ◽  
Author(s):  
T. H. ANDERSEN ◽  
L. BECH ◽  
J. ONSGAARD ◽  
S. V. HOFFMANN ◽  
Z. LI
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Energy Shift ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Copper Adsorption ◽  
X Ray ◽  
Level Shifts ◽  
Binding Energy Shift

Copper adsorption on Ru(0001) has been studied by synchrotron radiation. The clean Ru 3d 5/2 spectra were found to consist of two components with a binding energy shift of 400 meV. The component with the lower binding energy represents the first layer of ruthenium atoms. Adsorption of copper gives rise to core level shifts of the Ru 3d 5/2 components, which were studied as a function of Cu coverage. Experiments were carried out with copper coverages varying from the submonolayer range up to two monolayers of copper. The binding energy of the Cu 2p 3/2 level was measured by X-ray photoemission spectroscopy.

scholarly journals High-Pressure Spectroscopy Study of Zn(IO3)2 Using Far-Infrared Synchrotron Radiation

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 34
Author(s):  
Akun Liang ◽  
Robin Turnbull ◽  
Enrico Bandiello ◽  
Ibraheem Yousef ◽  
Catalin Popescu ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transitions ◽  
Synchrotron Radiation ◽  
Infrared Radiation ◽  
Room Temperature ◽  
Far Infrared ◽  
Low Pressure ◽  
Pressure Response ◽  
Spectroscopy Study ◽  
Far Infrared Radiation

We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.

Core-level shifts in complex metallic systems from first principle

2006 ◽  
Vol 243 (11) ◽  
pp. 2447-2464 ◽  
Author(s):  
Weine Olovsson ◽  
Christian Göransson ◽  
Tobias Marten ◽  
Igor A. Abrikosov
Keyword(s):  
Core Level ◽  
First Principle ◽  
Level Shifts ◽  
Metallic Systems
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