Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds

1983 ◽  
Vol 1 (3) ◽  
pp. 1735-1743 ◽  
Author(s):  
W. E. Spicer ◽  
J. A. Silberman ◽  
I. Lindau ◽  
A.‐B. Chen ◽  
A. Sher ◽  
...  
Keyword(s):  
Band Gap ◽  
Surface And Interface ◽  
Lattice Surface ◽  
Related Compounds

A Critical Review on Energy Conversion and Environmental Remediation of Photocatalysts with Remodeling Crystal Lattice, Surface, and Interface

ACS Nano ◽  
2019 ◽  
Vol 13 (9) ◽  
pp. 9811-9840 ◽  
Author(s):  
Jinming Luo ◽  
Shuqu Zhang ◽  
Meng Sun ◽  
Lixia Yang ◽  
Shenglian Luo ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Crystal Lattice ◽  
Critical Review ◽  
Environmental Remediation ◽  
Surface And Interface ◽  
Lattice Surface

Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KC07 ◽  
Author(s):  
Hiroshi Sakakima ◽  
Mikihiko Nishitani ◽  
Koichi Yamamoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Experimental Studies ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type ◽  
Related Compounds

Hrtem Study of Interface Structure Of Heteroepitaxially Grown GaAs Thin Films on GaAs(l00)

1998 ◽  
Vol 4 (S2) ◽  
pp. 624-625
Author(s):  
Z.R. Dai ◽  
S.R. Chegwidden ◽  
F.S. Ohuchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Second Harmonic ◽  
Interface Structure ◽  
Thermal And Mechanical Properties ◽  
Surface And Interface ◽  
Device Structures ◽  
New Generation ◽  
Related Compounds

GaSe, a member of the III-VI compound semiconductors, and its related compounds have recently gained an considerable attention because of their high non-linear optical coefficients in the infrared ranges, making them candidates for second harmonic generation (SHG) materials[l,2]. While the optical properties of those materials in bulk form are quite promising, poor thermal and mechanical properties preclude their easy applications. In thin film devices, the thermal and mechanical properties are dominated by those of the substrate, therefore, heteroepitaxially grown thin films of GaSe and related materials on substrates such as GaAs, Si and A12O3 should enable their application in device structures. Development of such new generation of materials, however, require fundamental knowledge about the surface and interface structure that play decisive roles in the thin film crystallinity and materials properties.

scholarly journals High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 7896-7905 ◽  
Author(s):  
E. Xenogiannopoulou ◽  
P. Tsipas ◽  
K. E. Aretouli ◽  
D. Tsoutsou ◽  
S. A. Giamini ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Smooth Surface ◽  
Molecular Beam ◽  
Interface Morphology ◽  
Large Area ◽  
High Quality ◽  
High Crystallinity ◽  
Surface And Interface

Atomically thin MoSe2 films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.

IMPROVEMENT IN OPTICAL BAND GAP DETERMINATION FOR CADMIUM TELLURIDE AND RELATED COMPOUNDS

2016 ◽  
Vol 75 (15) ◽  
pp. 1369-1376
Author(s):  
V.P. Makhniy ◽  
Yu.V. Vorobiev ◽  
V.M. Sklarchuk ◽  
J. Gonzalez-Hernandez
Keyword(s):  
Band Gap ◽  
Cadmium Telluride ◽  
Optical Band Gap ◽  
Related Compounds

Surface and interface issues in wide band gap semiconductor electronics

2010 ◽  
Vol 256 (19) ◽  
pp. 5727-5735 ◽  
Author(s):  
F. Roccaforte ◽  
F. Giannazzo ◽  
F. Iucolano ◽  
J. Eriksson ◽  
M.H. Weng ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Surface And Interface ◽  
Semiconductor Electronics

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

Sign in / Sign up

Export Citation Format

Share Document