scholarly journals High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 7896-7905 ◽  
Author(s):  
E. Xenogiannopoulou ◽  
P. Tsipas ◽  
K. E. Aretouli ◽  
D. Tsoutsou ◽  
S. A. Giamini ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Smooth Surface ◽  
Molecular Beam ◽  
Interface Morphology ◽  
Large Area ◽  
High Quality ◽  
High Crystallinity ◽  
Surface And Interface

Atomically thin MoSe2 films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

1997 ◽  
Vol 71 (13) ◽  
pp. 1810-1812 ◽  
Author(s):  
S. Rujirawat ◽  
L. A. Almeida ◽  
Y. P. Chen ◽  
S. Sivananthan ◽  
David J. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
High Quality

Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates

2003 ◽  
Vol 764 ◽  
Author(s):  
N. Rousseau ◽  
O. Briot ◽  
V. Ribes ◽  
R.L. Aulombard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Physical Phenomenon ◽  
Chemical Vapour ◽  
Rare Earth Ions ◽  
Crystal Quality ◽  
High Quality ◽  
Gas Source ◽  
Er Doped

AbstractSince the work of Favennec et al.[1] it is well known that the quenching of luminescence from rare earth ions decreases with the host band gap. This has led to a large activity with silicon implanted or doped with RE, and then GaAs was used, in hope to realize simple, cheap light emitters. With a band gap of 3.4 eV at room temperature, GaN is even better suited to such applications. As a matter of fact, Steckl et al.[2] have demonstrated a green light emitting device based on Er doped GaN. This resulted in a renewed effort in this direction, but the crystal quality still have to be mastered and the physical phenomenon involved to be understood. In this work, GaN and Er-doped GaN with various Er concentrations were grown by gas source molecular beam epitaxy on high quality GaN templates grown by metalorganic chemical vapour deposition. In order to understand the influence of the Er incorporation on the crystal quality of GaN, Er-doped GaN were grown with a concentration between 0.1% and 5%. High quality undoped GaN were also grown, as a reference material, to show how the smallest amount of Er may affect drastically the structural and optical properties. All the samples were characterized by scanning electron microscopy, atomic force microscopy and X-ray diffraction. With these measurements, we demonstrate a strong correlation between the Er concentration and the surface roughness and the crystalline quality. This study shows that the activation of the Erbium luminescence is not improved with improving crystal quality. This assumption supports the idea that Er luminescence should be related to defect center in GaN.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

scholarly journals Tuning the transport and magnetism in a Cr–Bi2Se3topological insulator by Sb doping

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47789-47795 ◽  
Author(s):  
Y. Tung ◽  
C. W. Chong ◽  
C. W. Liao ◽  
C. H. Chang ◽  
S. Y. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Sb Doping

High-quality crystalline (Cr,Sb)-doped Bi2Se3(Cr-BSS) films were synthesized using molecular beam epitaxy (MBE).

Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon

2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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