Silicide formation in lateral diffusion couples

1983 ◽  
Vol 1 (2) ◽  
pp. 758-761 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Lateral Diffusion ◽  
Silicide Formation ◽  
Diffusion Couples

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Lateral Silicide Growth

1983 ◽  
Vol 25 ◽  
Author(s):  
L. R. Zheng ◽  
E. Zingu ◽  
J. W. Mayer
Keyword(s):  
Activation Energy ◽  
Low Temperatures ◽  
Lateral Diffusion ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Metal Silicides ◽  
Silicide Growth ◽  
Si Films

ABSTRACTSilicide formation and growth kinetics have been investigated with lateral diffusion couples formed by deposition of Ni and Cr layers on patterned Si substrates and by deposition of Ni patterns on Si films. For annealing temperatures between 520 and 650°C the growth of CrSi2follows a (time)½ dependence with an activation energy of 1.4± 0.1 eV. In Ni-silicide formation at temperatures below 600°C, Ni was the predominant moving species. As the temperature increased, the motion of Si became significant. The apparent activation energy for silicide formation varied from Ea ≅ 1.4 eV for Ni motion at relatively low temperatures to Ea≅ 2.3 eV for Si motion that occurs at high temperatures. Lateral diffusion in device geometry structures resulted in degradation of contact planarity due to the penetration of metal silicides in Ni-Si structures or the erosion of silicon in Cr-Si structures.

Phase formation of NiAl3on lateral diffusion couples

1988 ◽  
Vol 64 (2) ◽  
pp. 651-655 ◽  
Author(s):  
Joyce C. Liu ◽  
J. W. Mayer ◽  
J. C. Barbour
Keyword(s):  
Phase Formation ◽  
Lateral Diffusion ◽  
Diffusion Couples

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

High-resolution electron microscopy studies of Ni silicides formed in lateral diffusion couples

1985 ◽  
Vol 18 (1-4) ◽  
pp. 297-303 ◽  
Author(s):  
S.H. Chen ◽  
Z. Elgat ◽  
J.C. Barbour ◽  
L.R. Zheng ◽  
J.W. Mayer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Lateral Diffusion ◽  
High Resolution Electron Microscopy ◽  
Diffusion Couples ◽  
Resolution Electron ◽  
Ni Silicides

Aluminum and Ni–silicide lateral reactions

1990 ◽  
Vol 5 (2) ◽  
pp. 334-340 ◽  
Author(s):  
Joyce C. Liu ◽  
J. W. Mayer
Keyword(s):  
Electron Microscope ◽  
Lateral Diffusion ◽  
Second Step ◽  
Lateral Growth ◽  
Diffusion Couples ◽  
The Third ◽  
Third Phase ◽  
Transmission Electron ◽  
Sequential Formation

The Al–Ni2Si reactions were studied in lateral diffusion couples containing Al islands on Ni–Si multiple layers. The samples were first in situ annealed in a transmission electron microscope at a temperature of 370°C for 5 min to form the Ni2Si phase in the multiple-layer area. Then they were in situ annealed at temperatures ranging from 498–545 °C. During the second-step anneal, a sequential formation of Al3Ni, Al3Ni2, and Ni3Si2 was observed. After the nucleation of the third phase (Ni3Si2), the three phases grew simultaneously with time. The lateral growth of Al3Ni and Al3Ni2 is a result of the Al diffusion and the Al–Ni silicide reactions; the lateral growth of Ni3Si2 is caused by the diffusion of Si atoms dissociated from the silicides.

Layered growth of the quasicrystalline decagonalAl3Pd phase in Al/Pd lateral diffusion couples

1990 ◽  
Vol 64 (22) ◽  
pp. 2671-2674 ◽  
Author(s):  
B. Blanpain ◽  
J. W. Mayer ◽  
Joyce C. Liu ◽  
K. N. Tu
Keyword(s):  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Layered Growth

Structure Analysis of Ni-Silicides Formed in Lateral Diffusion Couples

1984 ◽  
Vol 37 ◽  
Author(s):  
S. H. Chen ◽  
J. C. Barbour ◽  
L. R. Zheng ◽  
C. B. Carter ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
High Resolution ◽  
Structure Analysis ◽  
Composition Range ◽  
Lateral Diffusion ◽  
High Resolution Electron Microscopy ◽  
The Other ◽  
Diffusion Couples ◽  
Resolution Electron

AbstractThe microstructures of the silicide Ni5Si2, which formed in self-supporting Ni-Si lateral-diffusion couples has been studied using high-resolution electron microscopy. Two different polymorphs (or polytypes) for Ni5Si2 have been observed. The actual composition of one polytype is confirmed to be Ni31Si12, while the other one has not yet been identified. Variations in the distribution of the two polytypes, as observed in the present study, may account for the composition range of Ni5Si2 in the Ni-Si phase diagram.

Lateral-diffusion couples studied by transmission electron microscopy

1984 ◽  
Vol 2 (6) ◽  
pp. 469-476 ◽  
Author(s):  
S.H. Chen ◽  
L.R. Zheng ◽  
J.C. Barbour ◽  
E.C. Zingu ◽  
L.S. Hung ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Transmission Electron

Lateral Diffusion of Platinum Through Pt2Si in Pt/Si Couples

1982 ◽  
Vol 18 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Electron Microprobe ◽  
Lateral Diffusion ◽  
Square Root ◽  
Diffusion Couples ◽  
X Ray ◽  
Temperature Range ◽  
Scanning Electron

Lateral diffusion couples formed by depositing platinum islands on silicon layers on Al2O3 were used in conjunction with scanning electron microprobe measurements to investigate the growth of platinum silicides in the temperature range 400–700 °C. The phase Pt2Si grows over a length of 4–30 μm with a rate proportional to the square root of time and an activation energy of approximately 1.3 eV. With samples containing 7 at.% Rh in the platinum, the growth rate of Pt2Si is reduced and the activation energy is increased to about 2.0 eV. In these Pt–7at.% Rh samples, electron-induced X-ray measurements indicate that rhodium remains in the original deposited region while both platinum and silicon diffuse in the formed Pt2Si region.

Sign in / Sign up

Export Citation Format

Share Document