Phase formation of NiAl3on lateral diffusion couples

1988 ◽  
Vol 64 (2) ◽  
pp. 651-655 ◽  
Author(s):  
Joyce C. Liu ◽  
J. W. Mayer ◽  
J. C. Barbour
Keyword(s):  
Phase Formation ◽  
Lateral Diffusion ◽  
Diffusion Couples

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

Silicide formation in lateral diffusion couples

1983 ◽  
Vol 1 (2) ◽  
pp. 758-761 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Lateral Diffusion ◽  
Silicide Formation ◽  
Diffusion Couples

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

High-resolution electron microscopy studies of Ni silicides formed in lateral diffusion couples

1985 ◽  
Vol 18 (1-4) ◽  
pp. 297-303 ◽  
Author(s):  
S.H. Chen ◽  
Z. Elgat ◽  
J.C. Barbour ◽  
L.R. Zheng ◽  
J.W. Mayer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Lateral Diffusion ◽  
High Resolution Electron Microscopy ◽  
Diffusion Couples ◽  
Resolution Electron ◽  
Ni Silicides

Aluminum and Ni–silicide lateral reactions

1990 ◽  
Vol 5 (2) ◽  
pp. 334-340 ◽  
Author(s):  
Joyce C. Liu ◽  
J. W. Mayer
Keyword(s):  
Electron Microscope ◽  
Lateral Diffusion ◽  
Second Step ◽  
Lateral Growth ◽  
Diffusion Couples ◽  
The Third ◽  
Third Phase ◽  
Transmission Electron ◽  
Sequential Formation

The Al–Ni2Si reactions were studied in lateral diffusion couples containing Al islands on Ni–Si multiple layers. The samples were first in situ annealed in a transmission electron microscope at a temperature of 370°C for 5 min to form the Ni2Si phase in the multiple-layer area. Then they were in situ annealed at temperatures ranging from 498–545 °C. During the second-step anneal, a sequential formation of Al3Ni, Al3Ni2, and Ni3Si2 was observed. After the nucleation of the third phase (Ni3Si2), the three phases grew simultaneously with time. The lateral growth of Al3Ni and Al3Ni2 is a result of the Al diffusion and the Al–Ni silicide reactions; the lateral growth of Ni3Si2 is caused by the diffusion of Si atoms dissociated from the silicides.

Layered growth of the quasicrystalline decagonalAl3Pd phase in Al/Pd lateral diffusion couples

1990 ◽  
Vol 64 (22) ◽  
pp. 2671-2674 ◽  
Author(s):  
B. Blanpain ◽  
J. W. Mayer ◽  
Joyce C. Liu ◽  
K. N. Tu
Keyword(s):  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Layered Growth

Structure Analysis of Ni-Silicides Formed in Lateral Diffusion Couples

1984 ◽  
Vol 37 ◽  
Author(s):  
S. H. Chen ◽  
J. C. Barbour ◽  
L. R. Zheng ◽  
C. B. Carter ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
High Resolution ◽  
Structure Analysis ◽  
Composition Range ◽  
Lateral Diffusion ◽  
High Resolution Electron Microscopy ◽  
The Other ◽  
Diffusion Couples ◽  
Resolution Electron

AbstractThe microstructures of the silicide Ni5Si2, which formed in self-supporting Ni-Si lateral-diffusion couples has been studied using high-resolution electron microscopy. Two different polymorphs (or polytypes) for Ni5Si2 have been observed. The actual composition of one polytype is confirmed to be Ni31Si12, while the other one has not yet been identified. Variations in the distribution of the two polytypes, as observed in the present study, may account for the composition range of Ni5Si2 in the Ni-Si phase diagram.

Phase Formation under Pulse Loading

2005 ◽  
Vol 237-240 ◽  
pp. 715-720
Author(s):  
D.S. Gertzricken ◽  
V.F. Mazanko ◽  
T.V. Zaporozhets ◽  
Andriy Gusak
Keyword(s):  
Uniaxial Compression ◽  
Phase Formation ◽  
Solid Solutions ◽  
Md Simulations ◽  
Pulse Loading ◽  
Diffusion Couples ◽  
High Deformation

Pulse loading of diffusion couples leads to the formation of the broad metastable solid solutions. Under higher temperatures, combined with high deformation rates, intermetallics also can form. Possible mechanisms of this phenomenon are discussed. Formation of nanostructure under uniaxial compression/decompression (observed in MD simulations) seems to be one of the possibilities.

Lateral-diffusion couples studied by transmission electron microscopy

1984 ◽  
Vol 2 (6) ◽  
pp. 469-476 ◽  
Author(s):  
S.H. Chen ◽  
L.R. Zheng ◽  
J.C. Barbour ◽  
E.C. Zingu ◽  
L.S. Hung ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Transmission Electron

Reactions between palladium and gallium arsenide: Bulk versus thin-film studies

1988 ◽  
Vol 3 (1) ◽  
pp. 148-163 ◽  
Author(s):  
J. -C. Lin ◽  
K. -C. Hsieh ◽  
K. J. Schulz ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
Ternary Phase ◽  
Film Studies ◽  
Bulk Diffusion ◽  
Diffusion Path ◽  
Solution Phase ◽  
Stable Configuration ◽  
Diffusion Couples ◽  
Initial Formation

Reactions between Pd and GaAs have been studied using bulk-diffusion couples of Pd (∼0.6 mm thick) /GaAs and thin-film Pd (50 and 160 nm)/GaAs samples. The sequence of phase formation at 600°C between bulk Pd and GaAs was established. Initial formation of the solution phase μ and the ternary phase T does not represent the stable configuration. The stable configuration is GaAs |∊|Λ|γ|ν|Pd and is termed the diffusion path between GaAs and Pd. The sequence of phase formation for the bulk-diffusion couples is similar at 500°C. Phase formation for the thin-film Pd/GaAs specimens was studied at 180,220,250,300,350,400,450,600, and 1000°C for various annealing times. The sequence of phase formation obtained from the thin-film experiments is rationalized readily from the known ternary phase equilibria of Ga–Pd–As and the results from the bulk-diffusion couples of Pd/GaAs. The thin-film results reported in the literature are likewise rationalized. The diffusion path concept provides a useful guide in understanding the phase formation in Pd–GaAs interface or any other M-GaAs interface. This information is important in designing a uniform, stable contact for the metallization of GaAs.

Sign in / Sign up

Export Citation Format

Share Document