Fermi level position and density of states of intrinsic, phosphorus‐doped, and boron‐doped a‐Si:H deposited on stainless steel

1983 ◽  
Vol 1 (2) ◽  
pp. 583-587 ◽  
Author(s):  
Paul Nielsen ◽  
Robert Gredin
Keyword(s):  
Stainless Steel ◽  
Fermi Level ◽  
Density Of States ◽  
Fermi Level Position ◽  
Boron Doped ◽  
Phosphorus Doped

Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

2014 ◽  
Vol 116 (19) ◽  
pp. 193503 ◽  
Author(s):  
Kazuhisa Torigoe ◽  
Jun Fujise ◽  
Toshiaki Ono ◽  
Kozo Nakamura
Keyword(s):  
Fermi Level ◽  
Enhanced Diffusion ◽  
Fermi Level Position ◽  
Boron Doped ◽  
Doped Silicon

Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

1989 ◽  
Vol 149 ◽  
Author(s):  
G. Schumm ◽  
G. H. Bauer
Keyword(s):  
Phase Shift ◽  
Fermi Level ◽  
Fermi Energy ◽  
Strong Correlation ◽  
Defect Structure ◽  
Phase Shift Analysis ◽  
Defect Distribution ◽  
Fermi Level Position ◽  
Boron Doped ◽  
Shift Analysis

ABSTRACTGap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at Ef and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

Transient and modulated photoconductivity in microcrystalline silicon

2004 ◽  
Vol 808 ◽  
Author(s):  
R. Brüggemann ◽  
C. Longeaud ◽  
J.P. Kleider
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Large Degree ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Fermi Level Position ◽  
Transient Photocurrent ◽  
History Of ◽  
Adsorption Of Gases ◽  
Localised States

ABSTRACTWe report on transient and modulated photoconductivity experiments with undoped michrystalline silicon in which access to density-of-states information is limited because the Fermi level results in occupancy of localised states in the energy range which is scanned. Simulation results show that a defect peak will be masked if most of the distribution is occupied because of the Fermi level position and the density-of-states determined from the experimental data is not an image of the true distribution. Another difficulty with obtaining reliable density-of-states distributions in microcrystalline silicon is the metastability of samples with respect ot adsorption of gases. If dark-conductivity changes are large upon heat treatment in vacuum, the modulated and transient photocurrent response are also affected to a large degree and the density-of-states profiles apart form being influenced by the Fermi level position thus also depend on the thermal history of the sample.

scholarly journals Investigation of single-domain Au silicide nanowires on Si(110) formed for Au coverages in the monolayer regime

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Stephan Appelfeller
Keyword(s):  
Fermi Level ◽  
Surface Structure ◽  
Density Of States ◽  
The Self ◽  
Single Domain ◽  
Photoemission Spectroscopy ◽  
Annealing Temperatures ◽  
Self Organized ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

AbstractThe self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.

Photosensitive tunneling in superconductivity

1970 ◽  
Vol 48 (5) ◽  
pp. 630-631 ◽  
Author(s):  
V. Radhakrishnan
Keyword(s):  
Fermi Level ◽  
Density Of States ◽  
Tunneling Current ◽  
Theoretical Treatment ◽  
Photoconductive Property

Theoretical treatment of the model proposed by Giaever for his experiment on the photosensitive tunneling in superconductors is examined. New relations are derived which connect the photoconductive property of the barrier and the tunneling current. These relations are helpful to check the model and to determine the density of states for the trapped holes at the hole Fermi level.

scholarly journals An ab-initio study on structural, elastic, electronic, bonding, thermal, and optical properties of topological Weyl semimetal TaX (X = P, As)

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. I. Naher ◽  
S. H. Naqib
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Fermi Level ◽  
Density Of States ◽  
Electronic Band Structure ◽  
Optical Parameters ◽  
Electronic Density ◽  
Electronic Band ◽  
Wide Range ◽  
Weyl Semimetals

AbstractIn recent days, study of topological Weyl semimetals have become an active branch of physics and materials science because they led to realization of the Weyl fermions and exhibited protected Fermi arc surface states. Therefore, topological Weyl semimetals TaX (X = P, As) are important electronic systems to investigate both from the point of view of fundamental physics and potential applications. In this work, we have studied the structural, elastic, mechanical, electronic, bonding, acoustic, thermal and optical properties of TaX (X = P, As) in detail via first-principles method using the density functional theory. A comprehensive study of elastic constants and moduli shows that both TaP and TaAs possesses low to medium level of elastic anisotropy (depending on the measure), reasonably good machinability, mixed bonding characteristics with ionic and covalent contributions, brittle nature and relatively high Vickers hardness with a low Debye temperature and melting temperature. The minimum thermal conductivities and anisotropies of TaX (X = P, As) are calculated. Bond population analysis supports the bonding nature as predicted by the elastic parameters. The bulk electronic band structure calculations reveal clear semi-metallic features with quasi-linear energy dispersions in certain sections of the Brillouin zone near the Fermi level. A pseudogap in the electronic energy density of states at the Fermi level separating the bonding and the antibonding states indicates significant electronic stability of tetragonal TaX (X = P, As).The reflectivity spectra show almost non-selective behavior over a wide range of photon energy encompassing visible to mid-ultraviolet regions. High reflectivity over wide spectral range makes TaX suitable as reflecting coating. TaX (X = P, As) are very efficient absorber of ultraviolet radiation. Both the compounds are moderately optically anisotropic owing to the anisotropic nature of the electronic band structure. The refractive indices are very high in the infrared to visible range. All the energy dependent optical parameters show metallic features and are in complete accord with the underlying bulk electronic density of states calculations.

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