Planar channeling of ions in compound semiconductor superlattices

1982 ◽  
Vol 21 (2) ◽  
pp. 384-385 ◽  
Author(s):  
John H. Barrett
Keyword(s):  
Compound Semiconductor ◽  
Planar Channeling ◽  
Semiconductor Superlattices

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Excitons And Phonons In II-VI Compound Semiconductor Superlattices

1989 ◽  
Author(s):  
A. V. Nurmikko ◽  
Q. Fu ◽  
D. Lee ◽  
R. L. Gunshor ◽  
L. A. Kolodziejski
Keyword(s):  
Compound Semiconductor ◽  
Semiconductor Superlattices

Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy

1988 ◽  
Vol 93 (1-4) ◽  
pp. 720-725 ◽  
Author(s):  
Nobuaki Teraguchi ◽  
Yasushi Takemura ◽  
Ryuhei Kimura ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Wide Bandgap ◽  
Compound Semiconductor ◽  
Semiconductor Superlattices ◽  
Metalorganic Molecular Beam Epitaxy
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