Transient Electronic Energy Relaxation And Excitonic Phenomena In II-VI Compound Semiconductor Superlattices

1987 ◽  
Author(s):  
A. V. Nurmikko
Keyword(s):  
Energy Relaxation ◽  
Electronic Energy ◽  
Compound Semiconductor ◽  
Semiconductor Superlattices

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Electronic Energy Relaxation in Toluene Vapor

1968 ◽  
Vol 49 (4) ◽  
pp. 1705-1714 ◽  
Author(s):  
Charles S. Burton ◽  
W. Albert Noyes
Keyword(s):  
Energy Relaxation ◽  
Electronic Energy ◽  
Toluene Vapor

Excitons And Phonons In II-VI Compound Semiconductor Superlattices

1989 ◽  
Author(s):  
A. V. Nurmikko ◽  
Q. Fu ◽  
D. Lee ◽  
R. L. Gunshor ◽  
L. A. Kolodziejski
Keyword(s):  
Compound Semiconductor ◽  
Semiconductor Superlattices

Size-Dependent Ultrafast Electronic Energy Relaxation and Enhanced Fluorescence of Copper Nanoparticles

2006 ◽  
Vol 110 (1) ◽  
pp. 143-149 ◽  
Author(s):  
Qusai Darugar ◽  
Wei Qian ◽  
Mostafa A. El-Sayed ◽  
Marie-Paule Pileni
Keyword(s):  
Copper Nanoparticles ◽  
Energy Relaxation ◽  
Electronic Energy ◽  
Enhanced Fluorescence ◽  
Size Dependent
Sign in / Sign up

Export Citation Format

Share Document