Techniques for electron beam testing and restructuring integrated circuits

1981 ◽  
Vol 19 (4) ◽  
pp. 1010-1013 ◽  
Author(s):  
D. C. Shaver
Keyword(s):  
Electron Beam ◽  
Integrated Circuits

DEPOSITION OF THIN FILM COPPER NANOSTRUCTURES BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION TECHNIQUE ON SiO2/p-TYPE Si(100) AND STUDY OF ITS OXIDATION BEHAVIOR

2011 ◽  
Vol 25 (19) ◽  
pp. 2567-2574 ◽  
Author(s):  
M. YEGANEH ◽  
M. SAREMI
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Oxidation Behavior ◽  
X Ray Diffraction ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique ◽  
P Type

Electron beam physical vapor deposition (EBPVD) is being used in coating components for many applications such as for producing nanostructures and integrated circuits (ICs) coating in electronic industry. In this work, copper was deposited on the SiO 2/p-type Si (100). Thin film characteristics are investigated by scanning electron microscopy and X-ray diffraction (XRD). Then oxidation behavior of deposits was evaluated by Dektak Surface Profiler and weight gain method at 200 and 300°C. Results showed that thin film copper deposited by EBPVD has better oxidation characteristics in comparison with copper foil.

A Fundamental Study of the Electron Beam Lithography beyond Sub 100nm Process and its Application

2015 ◽  
Vol 1109 ◽  
pp. 617-625
Author(s):  
Shiro Nagaoka ◽  
Hideo Horibe ◽  
Jin Ping Ao ◽  
Seiichi Tagawa
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Layer Structure ◽  
Design Rule ◽  
Process Conditions ◽  
Beam Diameter ◽  
Fundamental Study ◽  
Intrinsic Resolution ◽  
Gan Hfet

It is well known that electron beam lithography is one of the potential candidates to fulfill of the demand of the miniaturization of the design rule of semiconductor integrated circuits beyond sub 100nm size with high reproducibility. It is also a fact that the resolution is recognized to depend on the various factors which are oriented to the machine and process conditions, for example, electron beam diameter, the intensity distribution of the beam itself, the resistance properties polymers, the development conditions, etc. Therefore, it is thought that it is impossible to be derivable directly and unambiguously from the resist material itself. In this study, the intrinsic resolution of the resist polymer was discussed based on the hypothesis that the resolution itself may be able to improve to the same size as the size of an electron beam profile, or less. The bi-layer structure ZEP520A/poly methyl glutar imide (PMGI) was proposed and tested. As for the results achieved, the contrast γ was improved constantly with a reduction in the development time and a decrease in the development temperature. The highest γ value, approximately 18, was obtained during development at the-20°C condition. An approximately 70nm with high aspect ratio pattern which is almost the same size of the beam pattern was obtained. This result provides an understanding how the intrinsic resolution of the resist material should be, and can be applied to other lithography methods. This process was applied to the actual electrode pattern making process. An approximately 100nm width of Copper nanowire as the gate electrode for the AlGaN/GaN HFET was successfully demonstrated. In addition, AlGaN/GaN HFET operated at about 73.5GHz, successfully.

Multitechnique problem solving using EDS/EPMA and surface analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1782-1783
Author(s):  
Steven J. Simko ◽  
Richard A. Waldo
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
High Surface ◽  
Primary Electron ◽  
Sampling Depth ◽  
X Ray ◽  
Wide Range

Thin films are used in a wide range of modern technologies. Examples include sensors, antiwear coatings, optical coatings, and integrated circuits. A variety of methods have evolved for characterizing thin films in the thickness range of 1 monolayer to several micrometers. Electron probe microanalysis (EPMA) or energy dispersive x-ray spectroscopy (EDS) are two methods for characterizing thicker films (>1 μm). In these techniques, the sampling depth depends on the penetration depth of the primary electron beam which can be controlled by changing the electron beam energy. Thin films can also be characterized using line scans on specimens prepared as polished cross-sections or after angle lapping. For extremely thin films (<3 nm), techniques with high surface sensitivity such as Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) are commonly employed. Sampling depth depends on the attenuation length of the emitted photoelectrons or Auger electrons.Electron spectroscopy techniques are also used to characterize thicker films by adding a microsectioning method to the experiment, most commonly ion sputtering.

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