scholarly journals Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system

1981 ◽  
Vol 19 (3) ◽  
pp. 641-648 ◽  
Author(s):  
P. J. Grunthaner ◽  
F. J. Grunthaner ◽  
D. M. Scott ◽  
M‐A. Nicolet ◽  
J. W. Mayer
Keyword(s):  
Silicon Oxide ◽  
Metal Silicide ◽  
Oxygen Impurity ◽  
Impurity Effects

Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

1983 ◽  
Vol 54 (4) ◽  
pp. 1849-1854 ◽  
Author(s):  
J. E. E. Baglin ◽  
F. M. d’Heurle ◽  
C. S. Petersson
Keyword(s):  
Silicon Oxide ◽  
Silicon Substrates ◽  
Metal Silicide ◽  
Interface Effects

Microdefects and Impurities in Dislocation-Free Silicon Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Takao Abe ◽  
Hirofumi Harada ◽  
Jun-Ichi Chikawa
Keyword(s):  
Temperature Gradient ◽  
Defect Formation ◽  
Mutual Interaction ◽  
Oxygen Impurity ◽  
Formation Processes ◽  
Impurity Effects ◽  
X Ray ◽  
Silicon Crystals ◽  
Residual Oxygen ◽  
New Type

ABSTRACTMicrodefects in striated (swirl defects) and nonstriated distribution (D-defects) have been observed in float-zoned crystals doped with various impurities by x-ray topography following copper decoration. A new type of defects were found to be present in swirl-free and D-defect-free regions and to become invisible by doping gallium. This gallium effect led to the conclusion that they are microprecipitates produced from residual oxygen impurity in FZ crystals. Effects of various impurities on defect formation indicate that D-defects are of vacancy agglomerates. It was observed that swirl defects are formed when the temperature gradient near the interface is high, and that their formation is suppressed by doping nitrogen. Formation processes of microprecipitates, swirls, and D-defects are discussed on the basis of observation of their mutual interaction and the impurity effects.

Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

2015 ◽  
Vol 117 (19) ◽  
pp. 194307 ◽  
Author(s):  
J.-G. Lee ◽  
T. Nagase ◽  
H. Yasuda ◽  
H. Mori
Keyword(s):  
Electronic Excitation ◽  
Silicon Oxide ◽  
Metal Silicide ◽  
Oxide Interface

Oxygen impurity effects on the formation of thin titanium silicide films by rapid thermal annealing

1990 ◽  
Vol 23 (8) ◽  
pp. 1076-1081 ◽  
Author(s):  
M Heintze ◽  
A Catana ◽  
P E Schmid ◽  
F Levy ◽  
P Stadelmann ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Oxygen Impurity ◽  
Impurity Effects

Digital image processing methods applied to the study of annealing time on semiconductor-metal eutectic composites

1988 ◽  
Vol 46 ◽  
pp. 848-849
Author(s):  
J. Hefter
Keyword(s):  
Image Processing ◽  
Digital Image Processing ◽  
Digital Image ◽  
Electronic Device ◽  
Processing System ◽  
Average Diameter ◽  
Eutectic Solidification ◽  
Metal Silicide ◽  
The Matrix ◽  
Microscopic Studies

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

Analytical Electron Microscopy Study of Second-Phase Particles in 7075 and 7475 Aluminum Alloys

1985 ◽  
Vol 43 ◽  
pp. 348-349
Author(s):  
M. Raghavan ◽  
J. Y. Koo ◽  
J. W. Steeds ◽  
B. K. Park
Keyword(s):  
Aluminum Alloys ◽  
Silicon Oxide ◽  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Partial Substitution ◽  
Second Phase ◽  
X Ray ◽  
Second Phase Particles ◽  
Almost All

X-ray microanalysis and Convergent Beam Electron Diffraction (CBD) studies were conducted to characterize the second phase particles in two commercial aluminum alloys -- 7075 and 7475. The second phase particles studied were large (approximately 2-5μm) constituent phases and relatively fine ( ∼ 0.05-1μn) dispersoid particles, Figures 1A and B. Based on the crystal structure and chemical composition analyses, the constituent phases found in these alloys were identified to be Al7Cu2Fe, (Al,Cu)6(Fe,Cu), α-Al12Fe3Si, Mg2Si, amorphous silicon oxide and the modified 6Fe compounds, in decreasing order of abundance. The results of quantitative X-ray microanalysis of all the constituent phases are listed in Table I. The data show that, in almost all the phases, partial substitution of alloying elements occurred resulting in small deviations from the published stoichiometric compositions of the binary and ternary compounds.

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