Microdefects and Impurities in Dislocation-Free Silicon Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Takao Abe ◽  
Hirofumi Harada ◽  
Jun-Ichi Chikawa
Keyword(s):  
Temperature Gradient ◽  
Defect Formation ◽  
Mutual Interaction ◽  
Oxygen Impurity ◽  
Formation Processes ◽  
Impurity Effects ◽  
X Ray ◽  
Silicon Crystals ◽  
Residual Oxygen ◽  
New Type

ABSTRACTMicrodefects in striated (swirl defects) and nonstriated distribution (D-defects) have been observed in float-zoned crystals doped with various impurities by x-ray topography following copper decoration. A new type of defects were found to be present in swirl-free and D-defect-free regions and to become invisible by doping gallium. This gallium effect led to the conclusion that they are microprecipitates produced from residual oxygen impurity in FZ crystals. Effects of various impurities on defect formation indicate that D-defects are of vacancy agglomerates. It was observed that swirl defects are formed when the temperature gradient near the interface is high, and that their formation is suppressed by doping nitrogen. Formation processes of microprecipitates, swirls, and D-defects are discussed on the basis of observation of their mutual interaction and the impurity effects.

Real-Time X-Ray Topographic Observation of Melting and Growth of Silicon Crystals

1980 ◽  
Vol 2 ◽  
Author(s):  
Jun-Ichi Chikawa ◽  
Fumio Sato
Keyword(s):  
Thermal Stresses ◽  
Melting Behavior ◽  
Interfacial Free Energy ◽  
Oxygen Effect ◽  
Oxygen Impurity ◽  
Television System ◽  
Growth Interface ◽  
X Ray ◽  
Silicon Crystals ◽  
Free Region

ABSTRACTA technique for the direct viewing of topographic images was developed based on a television system using an x-ray sensing PbO-vidicon camera tube (resolution 25 μm). Melting and growth processes of plate-shaped crystals were observed in an argon flow by this technique. The observation showed that dislocations have very high mobilities by superheating and the equilibrium dislocation density of zero is achieved just before melting. In melting of dislocation-free crystals, liquid drops (locally molten regions) were observed inside the crystals. While, crystallites appeared in the supercooled melt near the growth interface. It was found that both the drops and crystallites are not formed in 5% hydrogen/95% argon environment. Melting behavior of crystals covered with oxide films indicates that the solid-liquid interfacial free energy is greatly lowered by oxygen impurity. This oxygen effect may be responsible for both the drop and crystallite formation. Origin of swirl defects in dislocation-free crystals is discussed in the basis of these observations. Both composite and common a/2<110> dislocations were observed near the growth interface: The former are composed of three a/2<110> dislocations and are present at the interface so that, as the crystal grows, they propagate into the new crystal. They influence the interface morphology, when their Burgers vectors have the component perpendicular to the interface. The common dislocations cannot exist stably at the interface and are driven into the newly grown dislocation-free region by thermal stresses.

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals

2012 ◽  
Vol 717-720 ◽  
pp. 489-492
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
T. Fujimoto ◽  
S. Sato ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
High Resolution ◽  
Grown Crystal ◽  
Defect Formation ◽  
Growth Direction ◽  
Vapor Transport ◽  
Formation Processes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Close Proximity ◽  
Crystal Interface

Defect formation during the early stages of physical vapor transport (PVT) growth of 4H-SiC was investigated using high resolution x-ray diffraction (HRXRD). Characteristic lattice bending behaviors were revealed in the nearby seed crystal regions of grown crystals. The lattice bending was localized in close proximity to the seed/grown crystal interface, and the (0001) basal planes bended convexly toward the growth direction, indicative of the insertion of extra-half planes pointing toward the growth direction during the initial stages of crystal growth. This paper discusses the possible mechanisms of the observed lattice bending and sheds light on the defect formation processes during PVT-growth of 4H-SiC single crystals.

Crystal structure of an inclusion complex between chiral monoaza-15-crown-5 and S(–)-1-phenyl-ethyl ammonium percholorate

2003 ◽  
Vol 218 (5) ◽  
Author(s):  
Süheyla Özbey ◽  
F. B. Kaynak ◽  
M. Toğrul ◽  
N. Demirel ◽  
H. Hoşgören
Keyword(s):  
Crystal Structure ◽  
Inclusion Complex ◽  
Single Crystal ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
New Type

AbstractA new type of inclusion complex, S(–)-1 phenyl ethyl ammonium percholorate complex of R-(–)-2-ethyl - N - benzyl - 4, 7, 10, 13 - tetraoxa -1- azacyclopentadecane, has been prepared and studied by NMR, IR and single crystal X-ray diffraction techniques. The compound crystallizes in space group

A 2-D Zn(II) coordination polymer based on 4,5-imidazoledicarboxylate and bis(benzimidazole) ligands: synthesis, crystal structure and fluorescence properties

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Xinzhao Xia ◽  
Lixian Xia ◽  
Geng Zhang ◽  
Yuxuan Jiang ◽  
Fugang Sun ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Coordination Polymer ◽  
Zigzag Chain ◽  
Supramolecular Framework ◽  
X Ray Diffraction ◽  
Hydrothermal Conditions ◽  
Hydrogen Bond Interaction ◽  
X Ray ◽  
New Type ◽  
Solid State Fluorescence

Abstract In this work, a new type of zinc(II) coordination polymer {[Zn(HIDC)(BBM)0.5]·H2O} n (Zn-CP) was synthesized using 4,5-imidazoledicarboxylic acid (H3IDC) and 2,2-(1,4-butanediyl)bis-1,3-benzimidazole (BBM) under hydrothermal conditions. Its structure has been characterized by infrared spectroscopy, elemental analysis and single crystal X-ray diffraction analysis. The Zn(II) ion is linked by the HIDC2− ligand to form a zigzag chain by chelating and bridging, and then linked by BBM to form a layered network structure. Adjacent layers are further connected by hydrogen bond interaction to form a 3-D supramolecular framework. The solid-state fluorescence performance of Zn-CP shows that compared with free H3IDC ligand, its fluorescence intensity is significantly enhanced.

scholarly journals Accreting magnetars: a new type of high-mass X-ray binaries?

2012 ◽  
Vol 425 (1) ◽  
pp. 595-604 ◽  
Author(s):  
P. Reig ◽  
J. M. Torrejón ◽  
P. Blay
Keyword(s):  
High Mass ◽  
X Ray ◽  
New Type ◽  
X Ray Binaries

scholarly journals Three-Dimensional Electro-Thermal Analysis of a New Type Current Transformer Design for Power Distribution Networks

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1792
Author(s):  
Bingbing Dong ◽  
Yu Gu ◽  
Changsheng Gao ◽  
Zhu Zhang ◽  
Tao Wen ◽  
...  
Keyword(s):  
Boundary Condition ◽  
Temperature Field ◽  
Temperature Gradient ◽  
Field Distribution ◽  
Distribution Network ◽  
Current Transformer ◽  
Internal Temperature ◽  
Temperature Field Distribution ◽  
Type Design ◽  
New Type

In recent years, the new type design of current transformer with bushing structure has been widely used in the distribution network system due to its advantages of miniaturization, high mechanical strength, maintenance-free, safety and environmental protection. The internal temperature field distribution is an important characteristic parameter to characterize the thermal insulation and aging performance of the transformer, and the internal temperature field distribution is mainly derived from the joule heat generated by the primary side guide rod after flowing through the current. Since the electric environment is a transient field and the thermal environment changes slowly with time as a steady field under the actual conditions, it is more complex and necessary to study the electrothermal coupling field of current transformer (CT). In this paper, a 3D simulation model of a new type design of current transformer for distribution network based on electric-thermal coupling is established by using finite element method (FEM) software. Considering that the actual thermal conduction process of CT is mainly by conduction, convection and radiation, three different kinds of boundary conditions such as solid heat transfer boundary condition, heat convection boundary condition and surface radiation boundary condition are applied to the CT. Through the model created above, the temperature rise process and the distribution characteristics of temperature gradient of the inner conductor under different current, different ambient temperatures and different core diameters conditions are studied. Meanwhile, the hottest temperature and the maximum temperature gradient difference are calculated. According to this, the position of weak insulation of the transformer is determined. The research results can provide a reference for the factory production of new type design of current transformer.

Preparation of β-PbO2 and β-PbO2-MnO2 Coating on Stainless Steel Substrate

2012 ◽  
Vol 490-495 ◽  
pp. 3486-3490
Author(s):  
Qiang Yu ◽  
Zhen Chen ◽  
Zhong Cheng Guo
Keyword(s):  
Stainless Steel ◽  
Mass Fraction ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Substrate Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
New Type ◽  
Plating Solution ◽  
Element Mass Fraction

In order to prepare a new type of anode material, stainless steel was selected as substrate material. The β-PbO2 coating on stainless steel substrate was prepared under the appropriate plating solution, and the PbO2-MnO2 coating was prepared with thermal decomposition. The crystal structure was determined by X-ray diffraction; Surface morphology was test by Scanning Electron Microscopy; the energy spectrum was used to determine element mass-fraction and the ratio of atomic number of the coatings.

Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova
Keyword(s):  
Phase Transition ◽  
Charge Exchange ◽  
Defect Formation ◽  
Exchange Process ◽  
Temperature Phase ◽  
X Rays ◽  
Charge Exchange Process ◽  
X Ray ◽  
Temperature Phase Transition ◽  
A Charge

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

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