Core threshold photoemission spectroscopy from the As 3d core level of GaAs (110) and effects of Ge chemisorption

1981 ◽  
Vol 18 (3) ◽  
pp. 778-783 ◽  
Author(s):  
P. Zurcher ◽  
G. J. Lapeyre ◽  
R. Avci ◽  
J. Anderson
Keyword(s):  
Core Level ◽  
Photoemission Spectroscopy

Spin-Resolved Core Level Photoemission Spectroscopy

1995 ◽  
pp. 85-101
Author(s):  
F. U. Hillebrecht ◽  
Ch. Roth ◽  
H. B. Rose ◽  
E. Kisker
Keyword(s):  
Core Level ◽  
Photoemission Spectroscopy

Bulk sensitive core-level photoemission spectroscopy of

2007 ◽  
Vol 310 (2) ◽  
pp. e252-e254 ◽  
Author(s):  
T. Miyamachi ◽  
A. Sekiyama ◽  
S. Imada ◽  
H. Fujiwara ◽  
T. Saita ◽  
...  
Keyword(s):  
Core Level ◽  
Photoemission Spectroscopy

scholarly journals Linear polarization-dependent core-level photoemission spectroscopy in Yb-based valence fluctuating system

2020 ◽  
Vol 238 ◽  
pp. 146889
Author(s):  
Kentaro Kuga ◽  
Yuina Kanai ◽  
Hidenori Fujiwara ◽  
Kohei Yamagami ◽  
Satoru Hamamoto ◽  
...  
Keyword(s):  
Linear Polarization ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Fluctuating System

4d Core-level resonant photoemission spectroscopy of thulium monochalcogenides around the Tm3d threshold

1998 ◽  
Vol 88-91 ◽  
pp. 369-375 ◽  
Author(s):  
K.G. Nath ◽  
Y. Ufuktepe ◽  
S. Kimura ◽  
T. Kinoshita ◽  
H. Kumigashira ◽  
...  
Keyword(s):  
Core Level ◽  
Photoemission Spectroscopy ◽  
Resonant Photoemission

Si 2p Core Level Shifts of the Epitaxial SiON Layer on a SiC(0001), Studied by Photoemissin Spectroscopy

2011 ◽  
Vol 675-677 ◽  
pp. 15-19 ◽  
Author(s):  
T. Shirasawa ◽  
S. Tanaka ◽  
T. Muro ◽  
Y. Tamenori ◽  
Y. Harada ◽  
...  
Keyword(s):  
Chemical Shifts ◽  
Emission Angle ◽  
Core Level ◽  
Silicon Oxynitride ◽  
Photoemission Spectroscopy ◽  
Structure Model ◽  
Epitaxial Silicon ◽  
Angle Dependence ◽  
Spectral Components ◽  
Level Shifts

The epitaxial silicon oxynitride (SiON) layer grown on a 6H-SiC(0001) surface is studied with core level photoemission spectroscopy. Si 2p spectra show three spectral components other than the bulk one. Chemical shifts and emission angle dependence of these components are well explained within a framework of a determined structure model of the SiON layer.

Chemical Structure of MEH-PPV/LiF/Al Interface

2002 ◽  
Vol 734 ◽  
Author(s):  
X. D. Feng ◽  
D. Grozea ◽  
Z. H. Lu
Keyword(s):  
Oxygen Concentration ◽  
Chemical Structure ◽  
Electron Injection ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Electron Injection Layer

ABSTRACTWe studied the poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/LiF/Al interface by angle-dependent X-ray photoemission spectroscopy (XPS). The changes in the C1s, O 1s, Al 2p core level spectra, and the evolution of O to C and Li to F atomic ratios at different photoelectron take-off angles were carefully analyzed. A reduced oxygen concentration with a LiF layer at the interface suggests that LiF can help reduce the oxidation of Al. The interface was found rich in Li+ ions, some of which might be attached to MEH-PPV to form “N type” doping. The electron injection layer consists of Li+doped MEH-PPV, LiF, Al oxides, and metallic Al.

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