Thickness dependence of an amorphous overlayer Ge film on the electrical conductivity of ultrathin Pt films

1978 ◽  
Vol 15 (2) ◽  
pp. 363-365 ◽  
Author(s):  
S. Ogawa
Keyword(s):  
Electrical Conductivity ◽  
Thickness Dependence ◽  
Pt Films

scholarly journals The Gas-atmosphere Effect on the Electrical Conductivity of Ultra-thin Pt films.

Shinku ◽  
1998 ◽  
Vol 41 (3) ◽  
pp. 255-257
Author(s):  
Ayako HIOKI ◽  
Akio OKAMOTO ◽  
Kazuki NATSUKAWA ◽  
Soichi OGAWA
Keyword(s):  
Electrical Conductivity ◽  
Atmosphere Effect ◽  
Gas Atmosphere ◽  
Pt Films

Surface morphology and electrical property evolution of super-thin Pt film on 6H-SiC substrate during annealing

2011 ◽  
Vol 26 (3) ◽  
pp. 256-261
Author(s):  
Jingjing Yang ◽  
Wenxia Yuan ◽  
Xiaopeng Zeng
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Surface Morphology ◽  
Thin Layer ◽  
Annealing Temperature ◽  
Composition Gradient ◽  
Mechanism Analysis ◽  
Pt Films ◽  
Low Solubility ◽  
Crystalline Graphite

We reported the surface morphology and electrical property of super-thin Pt films, ∼2 nm thick, deposited on 6H-SiC (0001) substrates and subsequently annealed from 400 to 1000 °C. The surfaces of the films were found to have a feature of islands growth, and the sizes of the islands increased with increasing annealing temperature. Free carbon, produced by selective reactions between Pt and SiC, diffused toward the top surface across the product layers due to low solubility and composition gradient of carbon throughout the reaction zone. A dramatic change of electrical conductivity of the films was observed. A mechanism analysis reveals that the origin came from the contribution of aggregation of islands on the surface and formation of Pt silicides and a thin layer of crystalline graphite.

scholarly journals Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015020 ◽  
Author(s):  
M.-H. Liao ◽  
K.-C. Huang ◽  
F.-A. Tsai ◽  
C.-Y. Liu ◽  
C. Lien ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electric Power ◽  
Thickness Dependence ◽  
Thermo Electric

Comparison of PtSi Films Grown by Solid-State Reaction and by E-Beam Co-Evaporation: Thermal Stability in Air at 1000 °C

MRS Advances ◽  
2016 ◽  
Vol 1 (21) ◽  
pp. 1539-1544
Author(s):  
Robert T. Fryer ◽  
Robert J. Lad
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Solid State Reaction ◽  
Grain Morphology ◽  
X Ray Diffraction ◽  
Columnar Grain ◽  
Pt Films ◽  
Granular Morphology ◽  
Oxidation Mechanisms

ABSTRACTTwo different methods were used to synthesize 200 nm thick single-phase, orthorhombic-PtSi films: (i) e-beam co-evaporation (EBC) of Pt and Si onto r-sapphire substrates and (ii) solid-state reaction (SSR) of sputtered Pt films on Si (100) wafers. Morphology, electrical conductivity, and crystalline structure were characterized for as-grown films and for films annealed in air at 1000 °C via scanning electron microscopy (SEM), 4-pt conductivity measurements, andin situX-ray diffraction (XRD). As-grown EBC films exhibit columnar grain morphology and slight (101) crystalline texture, while SSR films exhibit granular morphology with many voids and a strong (002) texture. Above 600 °C, EBC PtSi films rapidly oxidize to form crystalline Pt3Si and amorphous SiO2phases. Around 1000 °C, the Pt3Si phase melts and c-Pt grains nucleate. After air annealing for 6 h at 1000 °C, room-temperature XRD shows that the oxidized EBC films consist of Pt3Si and Pt phases within a SiO2matrix and become electrically insulating. SSR films initially form with a (002) o-PtSi orientation and above 900 °C they recrystallize to preferred (101) texture and exhibit an unchanged electrical conductivity and a stable film morphology during 48 h of air annealing at 1000 °C. Separate oxidation mechanisms are proposed for the two film types.

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